ASM launches new PE2O8 silicon carbide epitaxy tool

The newly launched PE2O8 SiC epitaxy tool is a further enhancement to the industry-leading ASM single-wafer SiC epitaxy tool portfolio (including PE1O6 for 6-inch wafers and PE1O8 for 8-inch wafers). The tool adopts an independent dual-chamber design and is compatible with 6-inch and 8-inch wafers, which can increase production while reducing costs.

From October 16 to 18, 2024, ASM Semiconductor will be present at the first SEMiBAY 2024 held in Shenzhen . At the International Compound Semiconductor Industry Development Forum, ASM launched its latest new dual-chamber machine PE2O8 for silicon carbide epitaxy. Designed to meet the manufacturing needs of advanced silicon carbide power devices, this product is a benchmark epitaxy machine with low defectivity and high process consistency. It can be widely used in the manufacture of various types of silicon carbide devices, while increasing production and reducing ownership costs.

ASM PE2O8 Silicon Carbide Epitaxy Machine

As the electrification trend continues to evolve, more and more power device manufacturers are choosing to apply silicon carbide to high-power devices with growing demand, including electric vehicles, green energy, and advanced data centers. At the same time, more and more industries have put forward low-cost requirements for the application of silicon carbide devices, which has further accelerated the upgrade of silicon carbide wafers from 6 inches to 8 inches. In addition, thanks to the more advanced silicon carbide epitaxial technology, the ability of silicon carbide equipment manufacturers to design higher-power devices has also been enhanced.

Thanks to its unique dual-chamber design, the PE2O8 machine can deposit silicon carbide in a particularly precise and controlled manner, achieving higher output and throughput. Its highly compact independent dual-chamber design also effectively guarantees high productivity and low operating costs. In addition, the PE2O8 machine also adopts simpler preventive maintenance measures, which helps to extend the normal operation time of the equipment and reduce unplanned downtime. Currently, ASM has delivered PE2O8 machines to many of the world's leading silicon carbide power device manufacturers.

Steven Reiter, Vice President and Head of Plasma and Epitaxy Business Unit at ASM, said: “Silicon Carbide power products are experiencing a critical technology transition period. Customers are gradually transitioning from 6-inch wafers to 8-inch wafers, which will inevitably place higher requirements on yield, epitaxy process and product defect control. With its novel chamber design, ASM has become the industry benchmark for process consistency in the field of silicon carbide. With the introduction of the PE2O8 tool, our related product portfolio has been further upgraded to improve process control and create higher value for customers at a lower cost of ownership.”

ASM has been developing and improving single-wafer SiC epitaxy equipment through the company's newly planned SiC epitaxial product division since 2022. With the growth of structural demand in the electric vehicle market and the continuous improvement of SiC wafer and device yields, the SiC epitaxy equipment market has achieved substantial growth in recent years.

About Precision Semiconductor

ASM was founded in the Netherlands in 1968. It was born with the global semiconductor industry and led the rise of the world's electronic industrial revolution. Through more than half a century of development, ASM has achieved outstanding achievements in atomic layer deposition (ALD), epitaxy, chemical vapor deposition (CVD), Si and SiC epitaxy, etc. So far, ASM has established branches in 16 countries and regions around the world. ASM's common stock is traded on the Amsterdam Euronext (stock code: ASM).