Samsung reportedly breaks through low yield rate barrier, 3nm GAA process goes into mass production as planned

Samsung Electronics previously stated that it will start mass production using the 3GAE (early 3nm gate all-around) process this quarter (i.e. in the next few weeks). However, the industry previously reported that Samsung's 3nm yield was only 20-30%, which may hinder the mass production process and cause industry concerns.

According to Electronic Times, news from the industry stated that Samsung's 3nm yield problem has been solved and the 3nmGAA process will be mass-produced as scheduled.

The move comes after Samsung reassured shareholders in its first quarter conference call that it was on track as the company seeks to allay shareholder concerns over rumours of yield problems at its foundry unit.

In terms of chip production, he also said that the 5nm process has entered the mature stage of mass production, and the production capacity of 4nm chips will soon begin to improve. "Although the initial production expansion of the 4nm process has been delayed, it is currently entering the expected production improvement curve with a focus on stability."

He also said: "By improving the node development system for the 3nm process, Samsung now has a verification process for each development stage," emphasizing that this will help shorten the production ramp-up period, improve profitability, and ensure a more stable supply.

In the next 3nm node, Samsung is more radical than TSMC and decided to abandon FinFET transistor technology and launch the world's first GAA transistor process, while TSMC's 3nm process will still be based on the old process.

三星之前表示，GAA是一种新型的环绕栅极晶体管，通过使用纳米片设备制造出了MBCFET（Multi-Bridge-ChannelFET，多桥-通道场效应管），该技术可以显著增强晶体管性能。

According to Samsung, compared with the 7nm manufacturing process, the logic area efficiency of the 3nmGAA technology is increased by more than 45%, power consumption is reduced by 50%, and performance is improved by about 35%. On paper, it is better than TSMC's 3nmFinFET process.