Infineon Technologies to participate in PCIM 2024 to promote decarbonization and digitalization with innovative semiconductor solutions

[Shanghai, China, August 30, 2024] From August 28 to 30, Infineon attended the "2024 Shenzhen International Power Components and Renewable Energy Management Exhibition (hereinafter referred to as PCIM Asia)" held in Shenzhen. Focusing on the brand vision of "Digital Low Carbon, Creating a Better Future", it showcased its extensive silicon (Si), silicon carbide (SiC) and gallium nitride (GaN) power electronics product portfolio , including many products and solutions for renewable energy, electric transportation, and smart homes that made their debut.

This summer, temperatures exceeded 50 degrees Celsius in many parts of the world, setting a new record, and the trend of climate warming is becoming increasingly severe. Therefore, the transition from traditional fossil energy to new energy is urgent, and semiconductors, especially the third-generation semiconductor materials represented by SiC and GaN, play an important role.

Infineon Technologies to attend PCIM 2024

At this PCIM, Infineon has set up three theme exhibition areas, namely "Green Energy and Industry", "High Energy Efficiency and Smart Home", and "Electric Transportation and Electric Mobility". Infineon has displayed its many innovative products, high energy efficiency solutions and local customer application cases covering the entire power electronics industry chain in a multi-dimensional and all-round manner.

Green Energy and Industry

In the Green Energy and Industry exhibition area, Infineon showcased a number of new products, including the latest CoolSiC™ MOSFET G2, the new 4.5kV XHP™ 3 IGBT power module, 1200V CIPOS™ Maxi IPM and solid-state isolators, etc., demonstrating for the first time Infineon's complete product solutions in application areas such as wind energy, photovoltaics, energy storage, charging piles, industrial drives and automation, and heating and ventilation.

Compared with silicon-based products, silicon carbide can improve the efficiency of fast charging stations by 2%, thereby reducing charging time by about 25%. Infineon's new CoolSiC™ MOSFET 650V and 1200V G2 technologies optimize the main performance indicators of MOSFET (eg energy loss and stored charge) by 20% compared to the previous generation of products while ensuring quality and reliability. Combined with the award-winning .XT packaging technology, the transient thermal resistance of the chip is reduced by 25% or even higher, and the service life is extended by 80%, further enhancing the design potential based on CoolSiC™ G2, thereby achieving higher efficiency and lower power consumption.

Today, many applications have shown a clear trend of using smaller IGBT modules and transferring complex designs to the upstream of the industry chain. In order to comply with the global trend of miniaturization and integration, Infineon has launched the 4.5kV XHP™ 3 IGBT module, which aims to change the application market of medium voltage frequency converters (MVD) and transportation that currently use two-level and three-level topologies and use 2000V to 3300V AC voltage. Miniaturizing the size and maximizing the efficiency of the drive without reducing efficiency will benefit many applications such as large conveyors, pumps, high-speed trains, locomotives, and commercial, engineering and agricultural vehicles (CAV).

Infineon Technologies' Green Energy and Industry exhibition area highlights solutions

In addition, Infineon's latest high-performance 1200V CIPOS™ Maxi intelligent power module series made its debut. The product portfolio includes three new products: IM12B10CC1, IM12B15CC1 and IM12B20EC1. The current specifications range from 10A to 20A, and the output power can reach up to 4.0kW. It is suitable for low and medium power drive applications such as motor drives, pumps, fans, and outdoor fans for heating, ventilation and air conditioning. It is a cost-effective choice with the smallest package and the highest power density.

Energy efficiency and smart home

With the rapid development of humanoid robots, motor drives designed based on traditional silicon-based semiconductor switching devices face great challenges in improving power density. Infineon's latest medium-voltage GaN products and 2kW motor drive solutions based on medium-voltage GaN increase the switching frequency from 20kHz to 100kHz, significantly improving power density and further improving the overall system efficiency.

Currently, more and more topologies require an ideal switch, which can be turned off and on on both sides, and the switching speed must be very fast. Infineon's 650V bidirectional switch (BDS) gallium nitride product is the industry's first bidirectional switch concept device. In topology and other application fields, a CoolGaNTM BDS can achieve the functions that previously required four chips, simplifying customers' traditional complex bilateral switch circuit design, greatly improving performance and optimizing costs. This product can be used in motherboards and UPS in servers, OVP and USB-OTG in consumer electronics, and battery management in power tools.

Infineon's "Energy Efficiency and Smart Home" exhibition area highlights solutions

With the rapid development of artificial intelligence technology and the significant increase in GPU computing power, power supply chips are facing the challenge of providing higher power density. Infineon's advanced 16-phase digital controller and high-efficiency, high-reliability two-phase power module provide higher power density within limited onboard space, while ensuring more accurate current accuracy, fast dynamic response and improved power conversion efficiency. These solutions also incorporate multiple protection mechanisms, such as over-temperature and over-current protection, to provide reliable protection for the stable operation of core chips such as GPU/CPU/FPGA/ASIC.

In addition, for the AI ​​server 54V output platform, Infineon has developed a 3.3kW PSU dedicated Demo board, which uses Infineon's CoolGaNTM, CoolSiCTM, CoolMOSTM designs, as well as Infineon's own control chip XMC series and other complete solutions, which can achieve a benchmark efficiency of 97.5% for the whole machine and a power density of up to 96W per cubic inch, solving the high power requirements of data center PSUs. At the same time, this exhibition also showcased application solutions related to chargers and adapters. The 140W PD3.1 flat transformer high-density ACDC adapter uses digital control XDPS2221 Combo IC CrM PFC plus hybrid flyback HFB + GaN technology, demonstrating Infineon's high-power, high-frequency, single-port digital power solution, which can provide customers with high output power, high power density, high efficiency, and small size products.

E-mobility and e-mobility

In the e-Transportation and e-Mobility exhibition area, Infineon showcased its HybridPACK™ Drive G2 Fusion module and Chip Embedding power devices in the automotive semiconductor field to the domestic market for the first time. The HybridPACK™ Drive G2 Fusion module combines IGBT and SiC chips, effectively reducing the cost of SiC modules while significantly improving the application efficiency of the modules. Chip Embedding can be directly integrated into the PCB board, achieving a fusion of extremely small stray and extremely high integration.

Infineon Technologies' solutions highlighted in the "Electric Transportation and E-Mobility" booth

For automotive electronic control, Infineon's electronic control system solution uses the motor controller system of the second-generation HybridPACK™ Drive silicon carbide power module for demonstration. The system integrates AURIX™ TC4 series products, the second-generation 1200V SiC HybridPACK™ Drive module, the third-generation EiceDRIVER™ driver chip 1EDI30XX, coreless current sensor, etc., allowing the audience to experience the excellent functions and innovative features of Infineon products and their unique value in alleviating the range anxiety of electric vehicles.

For OBC (on-board charger)/DCDC applications, Infineon demonstrated its complete top cooling solution: 7.2kW magnetic integrated Tiny Box top cooling solution, which achieves the effective integration of high power density electrical and highly integrated structural solutions; the OBC/DCDC Demo Kit also includes all relevant products and different packaging technologies of Infineon in OBC/DCDC applications.

In addition, Infineon also displayed the Econodual™ 250kW power supply kit, silicon carbide main inverter kit (MSK), single-tube welding solution kit, etc. for commercial vehicles.

During the exhibition, Infineon also participated in the relevant seminars, "Exhibitor Forum" and "Industry Forum" hosted by PCIM Asia, and had in-depth exchanges and discussions with industry leaders, experts and scholars on hot topics such as high-efficiency power solutions for AI data centers, wide bandgap semiconductor applications, and lightweight electronic control solutions for flight control. In addition, the company shared innovative exploration and application results based on the challenges and opportunities of different industries. This not only demonstrated Infineon's profound heritage and forward-looking vision in the field of semiconductor technology, but also contributed to the promotion of low-carbonization and digitalization.