Focusing on power semiconductors, Ruineng Semiconductor creates efficient and reliable domestic chips

1700V SiC MOSFET

RuEn Semiconductor has more than 50 years of history in the field of power device research and development and manufacturing, and has also made remarkable achievements in the field of third-generation semiconductors (silicon carbide). Its latest 1700V SiC MOSFET (material number: WNSC2M1K0170W) adopts TO-247 package and is mainly used in power electronic systems such as photovoltaics, electric vehicles, energy storage and charging. Compared with the common 1500V Si MOSFET on the market, RuEn 1700V SiC MOSFET has obvious advantages in on-state resistance (Rdson). Under high temperature conditions, the on-state resistance of Si MOSFET rises rapidly, while the on-state resistance of RuEn SiC MOSFET changes less with temperature and can be maintained at a low level at a high temperature of 150°C, which also brings advantages in use for some applications with relatively harsh ambient temperatures.

Ruineng also provides a reference design for this 1700V SiC MOSFET device: the input voltage range is 200V-1000V, and the output can simultaneously provide 24V, 15V, -15V and other multiple loads, and can reach 60W at full power. The control method is a quasi-resonant flyback conversion mode using an analog IC controller. This control method achieves a high efficiency level within the full power range, with the highest efficiency point approaching 90%. Compared with the above-mentioned 1500V Si MOSFET competitors, the WNSC2M1K0170W has obvious efficiency advantages.

In the full power range, the 1700V SiC MOSFET device solution can maintain an efficiency advantage of about 3%, and in the working state, the lower loss also greatly reduces the operating temperature of the device, improving the long-term reliability of the device operation. In summary, WeEn's 1700V SiC MOSFET (Part Number: WNSC2M1K0170W) can effectively replace the Si MOSFET devices used in flyback converters, simplifying the system structure, reducing BOM costs, and improving efficiency and output power.

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