Toshiba’s 3rd generation silicon carbide MOSFET enables mid-to-high power density applications
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Advantages of Silicon Carbide MOSFETs
Compared with silicon MOSFETs of the same power level, the new generation silicon carbide MOSFET has significantly reduced on-resistance and switching losses, and is suitable for higher operating frequencies. Its high-temperature operating characteristics also greatly improve the high-temperature stability of the device. Its advantages include high operating temperature, high blocking voltage, low loss, and fast switching speed.
At the same power level, the number of power devices, radiator volume, and filter component volume in the equipment can be greatly reduced, and the efficiency is also greatly improved, which helps to achieve vehicle electrification and miniaturization of industrial equipment.
Basic characteristics of the device
Toshiba 3rd generation silicon carbide MOSFET
The main characteristics of Toshiba’s 3rd generation silicon carbide MOSFET are as follows
(1) Low on-resistance per unit area (R DS(ON) A)
(2) Low drain-source on-resistance × gate-drain charge (R DS(ON) × Q gd )
(3) Low diode forward voltage: V DSF =-1.35V (typ. value) @V GS =-5V
(4) Built-in SBD achieves low V F and high reliability (after the second generation product)
(5) Significantly improve on-resistance and switching loss
(6) High noise resistance and easy to use
Toshiba’s 3rd generation silicon carbide MOSFET main specifications
Functional Characteristics Analysis
The third generation TWxxNxxxC series launched by Toshiba has a total of 10 products, including 5 1200V and 5 650V products.
Like the 2nd generation products, these next-generation MOSFETs incorporate a silicon carbide Schottky barrier diode (SBD) in parallel with the silicon carbide MOSFET's internal PN junction diode, with a forward voltage (V F ) as low as -1.35V (typ. value), the fluctuation of R DS(on) can be suppressed , thereby improving reliability.
Built-in SBD suppresses fluctuations
However, when the MOSFET uses an SBD unit, the performance of the MOSFET will decrease: the on-resistance per unit area (R DS(ON) A) and the quality factor (R on *Q gd ) representing on-resistance and high speed will increase. In order to reduce the on-resistance per unit area, the chip area is usually increased, but this brings about the problem of unit cost.
To this end, Toshiba has used advanced silicon carbide processes to significantly improve unit area on-resistance R DS(ON) A and R on *Q gd . The R DS(ON) A of the new product is 43% lower than that of the second-generation product, thus reducing the drain-source on-resistance × gate-drain charge (R on *Q gd ) by about 80%, and the switching loss by about 20%. , helping to improve equipment efficiency. In addition, malfunctions caused by switching noise can be prevented due to the simple design of the gate drive circuit.
Structure of Toshiba’s 3rd generation silicon carbide MOSFET and 2nd generation products
Improvements to new product R DS(ON) A
Under the measurement conditions of V DD = 800V, I D = 20A, L = 100μH, RG (external gate resistance) = 4.7Ω, the measured turn-on and turn-off waveforms of the 2nd and 3rd generation silicon carbide MOSFETs are as follows: shown.
Turn-on and turn-off waveforms of two generations of products
Product application direction
Toshiba's 650V and 1200V third-generation silicon carbide MOSFETs have lower power consumption and are suitable for various applications with high power, high efficiency, and high power density, such as switching power supplies (data centers, servers, communication equipment, etc.), uninterruptible power supplies ( UPS), photovoltaic inverters, electric vehicle charging stations, etc.
Toshiba is also continuously expanding its power device product line, strengthening its production facilities, and striving to achieve a carbon-neutral economy by providing easy-to-use, high-performance power devices that empower medium and high power density applications.
About Toshiba Electronic Devices and Storage Corporation
Toshiba Electronic Components & Storage Corporation is a leading supplier of advanced semiconductor and storage solutions. The company has accumulated more than half a century of experience and innovation, providing customers and partners with outstanding solutions in the fields of discrete semiconductors, system LSIs and HDDs. plan.
The company's 22,200 employees are located around the world and are committed to maximizing product value. Toshiba Electronic Components and Storage Devices Co., Ltd. attaches great importance to close collaboration with customers, aiming to promote value co-creation and jointly explore new markets. The company now has more than With annual sales of 859.8 billion yen (US$6.2 billion), we look forward to building and contributing to a better future for people around the world.
For more information about Toshiba Electronic Components & Storage Corporation, please click on the following link to visit: https://toshiba-semicon-storage.com
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