PDZVTFTR4.7B datasheet, PDF - EEWORLD Datasheet

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PDZVTFTR4.7B: DescriptionIsolated zener diode, rated zener voltage 4.7V, chip mount, maximum power dissipation 1 W, SOD-128 package; CategoryDiscrete semiconductor diode; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/

PDZVTFTR4.7B Overview

PDZVTFTR4.7B is a Zener diode with 1W maximum power dissipation. It has a small molded type and a silicon epitaxial planar structure. It is mainly used in voltage regulation applications.

PDZVTFTR4.7B Parametric

Parameter Name	Attribute value
category	Discrete semiconductor;diode
Maker	ROHM Semiconductor
series	Automotive, AEC-Q101, PDZVTF
Package	Tape and Reel (TR) Cut Tape (CT)
Voltage - Zener (nominal) (Vz)	4.95 V
Tolerance	±5.32%
Power - Max	1 W
Impedance (max) (Zzt)	10 Ohms
Current at different Vr - reverse leakage	20 µA @ 1 V
Operating temperature	150°C（TJ）
Installation type	surface mount type
Package/casing	SOD-128
Supplier device packaging	PMDTM
Basic product number	PDZVTFTR4.7

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PDZVTF4.7B

Zener Diode

(AEC-Q101 qualified)

Data sheet

●

Outline

1000

●

Inner Circuit

●

Features

High reliability

Small power mold type

●

Application

Voltage regulation

●

Structure

Silicon Epitaxial Planar

●

Absolute Maximum Ratings (T

= 25

℃

)

●

Packaging Specifications

Packing

Embossed T

ape

Reel Size(mm)

180

aping Width(mm)

Quantity(pcs)

3000

aping Code

Marking

4.7B

Parameter

Power dissipation

Junction temperature

Storage temperature

Symbol

stg

Limits

1000

150

-55

150

Unit

℃

www.rohm.com

1/6

2019/04/18_Rev.005

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