52 Years of Flash Technology
Latest update time：2019-08-11
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Source: Content from " Storage Online ", thank you.
Compared to many computer technologies, flash memory has a relatively short history, but it can be said to be a technology that has grown rapidly in response to the huge and rapidly changing storage market requirements.
Originated in the late 1960s and proposed in the early 1980s, it has matured in the past few decades of development. Now let us go back in time to explore a glorious history of flash memory.
In 1967,
Dawon Kahng (Korean) and Dr. Simon Sze of Bell Labs jointly invented the floating-gate MOSFET, the basis of all flash memory, EEPROM and EPROM.
1970.
Dove Frohman invented the first successful floating-gate device, EPROM, which was erased by ultraviolet light and became popular in storing software, and was very important for Intel's successful launch of microprocessors.
1979-81.
Eli Harari, founder of SanDisk, an American flash storage developer, was employed by Intel at the time and invented the world's first electrically programmable and erasable memory - EEPROM, and envisioned the future vision of floating gate - replacing disks, but the proposal was rejected by Andy Grove, the then Intel CEO.
In 1984,
Dr. Fujio Masuoka, the father of flash memory, submitted an industry white paper on the new use of floating gates while at Toshiba. The contents of the entire chip could be erased in the blink of a camera's flash.
Dr. Masuoka then formally introduced flash memory at the IEEE 1984 Integrated Electronic Devices Conference in San Jose.
In 1986, Intel introduced the concept of flash memory cards and established a department dedicated to SSDs.
In 1987, Dr. Masuoka went on to invent NAND flash memory, or 2D NAND.
In 1988,
Intel saw the huge potential of flash memory and launched the first commercial flash memory chip, which successfully replaced EPROM products and was mainly used to store computer software. On
March 1 of the same year, Eli founded Sundisk (later renamed SanDisk), dedicated to making flash memory more like a disk to store data.
In 1989,
SunDisk submitted a patent for system flash memory.
M-Systems was established and soon launched the flash disk concept, which was a pioneer of flash SSD.
In the same year, Intel released 512K and 1MB NOR Flash.
Psion launched a flash-based PC.
Microsoft and Intel cooperated to launch a flash file system.
Western Digital and SunDisk completely simulated the traditional rotating ATA hard drive and launched a NOR Flash-based SSD.
Subsequently, Samsung and Toshiba each launched NAND flash memory, which has faster erase and write time, higher density, lower cost than NOR Flash, and more than ten times the durability.
However, its I/O interface only allows sequential access to data, which is suitable for large-capacity storage devices such as PC cards and various memory cards.
In the early 1990s, the flash memory industry expanded rapidly at an unprecedented rate, with revenue reaching US$170 million in 1991, US$295 million in 1992, US$505 million in 1993, US$864 million in 1994, and directly reaching US$1.8 billion in 1995.
1991.
SunDisk launched the first flash-based ATA SSD with a capacity of 20MB.
At that time, 10,000 IBM ThinkPad handheld notebook computers provided SSDs to replace disks.
Toshiba released the world's first 4 MB NAND flash memory.
Kodak sold the first professional digital camera, the DSC100, for $13,000.
Zenith Poqet and HP demonstrated handheld notebook computers using flash memory cards at computer trade shows.
In 1992,
AMD and Fujitsu launched the first NOR products.
Intel launched the second-generation FFS 2, 8MB flash memory chips, 4MB-20MB linear flash memory cards and 1MB Boot Block NOR Flash for BIOS applications, using internal write state machines to manage flash memory write algorithms for the first time.
SunDisk launched PCMCIA flash memory cards.
Since 1992, PCs have begun to use flash memory for BIOS storage.
In 1993,
Intel launched 16MB and 32MB NOR Flash.
Intel and Conner jointly developed 5MB/10MB ATA flash drives.
Apple began using NOR Flash in their Newton PDA.
1994.
SunDisk launched Compact Flash cards and 18MB serial NOR Flash chips for SSD applications.
In 1995,
SunDisk changed its name to SanDisk and launched 34MB serial NOR Flash, which was the first MLC flash memory chip for SSD applications.
1996.
Toshiba launched SmartMedia memory card, also known as solid-state floppy disk card.
Samsung began to sell NAND flash memory.
SanDisk launched the first flash memory card using MLC serial NOR technology.
1997.
The first mobile phone began to be equipped with flash memory, and the consumer flash memory market was opened.
1999.
NOR Flash revenue exceeds $4 billion.
Toshiba and SanDisk partner to create a flash memory manufacturing joint venture.
Micron announces that more than 1 billion flash memory chips have been shipped.
2001.
Toshiba and SanDisk announced the launch of 1GB MLC NAND.
SanDisk launched its first NAND system flash product.
Hitachi launched AG-AND.
Samsung began mass production of 512MB flash devices.
In 2004,
NAND prices fell below DRAM for the first time based on equivalent density, and the cost effect brought flash memory into the computing field.
2005.
Apple launched two flash memory-based iPods - iPod shuffle and iPod nano.
Microsoft released the concept of hybrid hard disk.
MMCA (Multimedia Card Association) launched MMCmicro card.
Samsung took the lead in mass production of NAND flash memory using 70nm process.
Micron also launched NAND products.
In the same year, more than 3 billion flash memory chips were sold and shipped.
The total sales capacity of NAND exceeded DRAM.
2006.
Flash memory revenue exceeds $20 billion.
Intel launches Robson Cache Memory, now called Turbo Memory.
Microsoft launches ReadyBoost.
This year is an important year for SanDisk.
The company announces NAND technology with 4-bit per unit storage and microSDHC cards.
At the same time, SanDisk also acquires Martix Semiconductor and M-Systems.
Samsung and Seagate demonstrate the first hybrid hard drive.
Micron and Intel officially cooperate to form IMFT to manufacture NAND flash memory.
Spansion launches ORNAND flash memory and announces the start of 300mm wafer production using 65nm process technology.
2007.
Flash memory revenues exceed $22 billion ($14.5 billion for NAND).
Toshiba launches eMMC NAND and the first MLC SATA-based SSD.
IMFT begins shipping 50nm NAND flash.
Apple officially launches the first iPhone with 4GB or 8GB flash.
Fusion-io announces 640GB ioDrive based on MLC NAND.
BitMicro launches 3.5-inch SSD with 1.6TB capacity for military applications.
Spansion acquires Saifun.
Dell adds SSD option to its laptop configurations, and netbooks priced under $200 add flash storage.
Seagate launches the first hybrid hard drive, the Momentus PSD.
2008.
SanDisk launches ABL for accelerated MLC, TLC, and X4 NAND.
Intel and Micron announce 34nm MLC NAND. Toshiba debuts 512GB
MLC SATA SSD.
IBM demonstrates "million IOPS" flash array for the first time.
EMC announces flash-based SSDs for enterprise SAN applications.
Apple launches two generations of MacBook Air, with 64GB and 128GB SSDs, respectively, and no hard drive option.
Micron, Samsung, and Sun Microsystems announce high-endurance flash memory.
Violin debuts all-flash-based storage device.
Samsung announces 150GB 2.5-inch MLC SSD.
Micron launches first serial NAND flash memory.
Toshiba develops 3D NAND structure BICS.
2009.
Intel and Micron introduced 34nm TLC NAND.
Samsung launched the first full HD camcorder with 64GB SSD.
Seagate entered the SSD market.
SandForce launched the first SSD controller based on data compression.
Virident and Schooner launched the first flash-based application device for data centers.
Plaint launched the first SAS SSD.
SanDisk launched SDHC and Memory Stick Pro cards with 4 bits per cell.
Western Digital acquired Silicon Systems to enter the SSD market.
SanDisk launched a flash storage library that claims to store data for 100 years.
2010.
Toshiba launches 128GB SD card based on 16-core stack.
Intel and Micron launch 25nm TLC and MLC NAND.
In the same year, Numonyx is acquired by Micron and SST is acquired by Microchip.
Samsung begins production of 64GB MLC NAND.
Seagate announces the launch of the first self-managing hybrid hard drive - Momentus XT.
2011
was a year of acquisitions.
LSI acquired SandForce;
SanDisk acquired IMFT, Apple acquired Anobit, and Fusion-io acquired IO Turbine.
Seagate launched the second-generation Momentus XT hybrid hard drive, which has 8GB NAND flash memory and 750GB HDD storage capacity.
2012.
Samsung created 3D NAND and launched the first generation of 3D NAND flash memory chips, and also the first 32-layer SLC V-NAND SSD - 850 PRO.
SanDisk and Toshiba announced the launch of 19nm flash memory supporting 128GB chips.
Seagate launched SSHD, which combines flash memory and HDD.
Elpida launched ReRAM.
Micron and Intel launched 20nm 128Gb NAND chips.
SK Telecom acquired a controlling stake in Hynix Semiconductor and SK Hynix was established.
Spansion launched 8Gb NOR chips.
SanDisk acquired FlashSoft.
OCZ acquired Sanrad.
Samsung acquired NVELO.
Intel acquired Nevex and launched CacheWorks.
LSI launched Nytro flash memory configured with MegaRAID CacheCade caching software.
Micron launched 2.5-inch enterprise-class PCIe SSD.
2013.
Samsung announced the launch of 24-layer 3D V-NAND and demonstrated a 1TB SSD at the 2013 Flash Memory Summit (FMS).
Diablo Technologies announced the launch of memory channel storage technology.
SMART Storage Systems incorporated Diablo's design into ULtraDIMM.
Western Digital and SanDisk launched SSHD using iSSSD+HDD.
Toshiba launched a series of SSHD.
Everspin announced the sale of STT MRAM.
The M.2 PCIe interface officially released the NVMe standard to accelerate communication with flash storage.
Western Digital successively acquired sTec, Virident and Velobit.
SanDisk acquired SMART Storage Systems.
Micron acquired the bankrupt Japanese chipmaker Elpida.
Intel launched Intel Cache Acceleration Software.
2014.
Samsung, SanDisk and Toshiba announced the launch of 3D NAND production equipment.
SanDisk launched a 4TB enterprise-class SSD and also released a 128GB microSD card.
IBM announced that its eXFlash DIMM uses SanDisk ULLtraDIMM and Diablo's memory channel storage technology.
Samsung also began shipping 32-layer MLC 3D V-NAND - 850 EVO.
2015.
SanDisk launches InfinitiFlash storage system.
Cypress Semiconductor acquires Spansion.
Toshiba and SanDisk announce 48-layer 3D NAND.
Intel and Micron announce 384GB 3D NAND.
Samsung launches first NVMe m.2 SSD and 48-layer V-NAND.
SanDisk launches 200GB microSDXC UHS-I card.
Cypress launches 4MB serial FRAM.
Intel and Micron announce 3D XPoint Memory.
Intel also launches Optane DIMM and SSD based on XPoint technology.
In 2016,
Toshiba released 48-layer TLC NAND for iPhone 7.
In the same year, SK Hynix released the UFS series for LG V20 based on 36-layer stacking technology.
Wuhan Xinxin Integrated Circuit Manufacturing Co., Ltd. (XMC) opened the first NAND flash memory factory in China.
Micron demonstrated 768GB 3D NAND.
Western Digital acquired SanDisk for $19 billion.
Everspin announced the launch of 256MB MRAM chips and 1 GB chips before the end of the year.
IBM released TLC PCM storage chips.
Intel began to sell 3D NAND products to the enterprise market, while Micron switched to the consumer market to sell SSDs.
In 2017, SK Hynix launched 72-layer 3D NAND.
Toshiba.
Intel launched Optane SSD.
HPE (New H3C) acquired Nimble and Simplivity.
Samsung and Toshiba/Western Digital launched 96-layer 3D NAND.
Micron launched string stack 3D NAND.
Everspin released 1GB STT-MRAM chip samples.
In the same year, Violin Memory, a veteran flash array manufacturer founded in 2005, went bankrupt and was privatized. It has now returned to the storage stage.
In 2018, Bain Capital completed the $18 billion acquisition of Toshiba's flash memory business.
Intel released Optane DC (data center) persistent memory.
Samsung released Z-SSD.
The first phase of the National Integrated Circuit Industry Investment Fund invested 138.7 billion yuan in the domestic semiconductor industry, and publicly invested in 23 domestic semiconductor companies.
Yangtze Memory, a subsidiary of Tsinghua Unigroup, developed a 32-layer 3D NAND chip and mass-produced it by the end of the year. It also plans to skip the 96-layer 3D NAND and go directly to the 128-layer stack in 2020.
In the same year, hybrid flash startup Tintri filed for bankruptcy, and its assets were purchased by HPC storage supplier DDN for $60 million.
In 2019,
Intel and Micron officially ended their 14-year partnership in NAND Flash technology. Some industry insiders believe that Intel may consider cooperating with NAND suppliers to develop chips and/or SSDs, including SK Hynix.
In the same year, AWS, the global public cloud giant, announced the acquisition of E8, a storage company that makes all-flash arrays based on NVMe over fabric (NVMe-oF) technology. The ever-changing and developing flash memory market is still moving forward. In any case, we are extremely looking forward to the future of flash memory.
*Disclaimer: This article is originally written by the author. The content of the article is the author's personal opinion. Semiconductor Industry Observer reprints it only to convey a different point of view. It does not mean that Semiconductor Industry Observer agrees or supports this point of view. If you have any objections, please contact Semiconductor Industry Observer.
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