In order to achieve the goal of becoming the world's number one foundry company, Samsung Electronics announced its next-generation 3nm gate-all-around process at the Samsung Foundry Forum 2019.
According to Korean media ZDNet Korea, the 3nm gate full-ring process allows the cylindrical channel through which current passes to surround the gate. Compared with the structure of the fin field-effect transistor (FinFET), this technology can control the current more precisely.
If the 3nm process is compared with the latest mass-produced 7nm FinFET, the chip area can be reduced by about 45%, while power consumption can be reduced by 50% and performance can be improved by 35%.
During the event, Samsung Electronics sent 3-nanometer engineering design kits to semiconductor design companies and shared core semiconductor technologies for the fourth industrial revolution, including artificial intelligence (AI), 5G mobile communications, driverless cars, and the Internet of Things (IoT). The engineering design kit supports optimized design data files in the manufacturing process of foundry companies. Semiconductor design companies can use this file to design products more easily, shorten time to market, and improve competitiveness.
At the same time, Samsung Electronics plans to win the favor of semiconductor design companies through its exclusive multi-bridge channel field effect transistor (MBCFETTM) technology in the 3nm process. The multi-bridge channel field effect transistor technology is a further development of the "slender wire-shaped" gate full ring structure, which is stacked with thin, slender nanosheets. This technology can improve performance, reduce power consumption, and has strong compatibility with FinFET processes, and has the advantage of directly utilizing existing equipment and technologies.
On the other hand, Samsung Electronics plans to hold a foundry forum in Shanghai on the 5th of next month, and will hold foundry forums in Seoul, South Korea, Tokyo, Japan, and Munich, Germany on July 3, September 4, and October 10, respectively.
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