NXP and TSMC Launch Industry’s First Automotive-Grade 16nm FinFET Embedded MRAM

NXP and TSMC Launch Industry’s First Automotive-Grade 16nm FinFET Embedded MRAM

NXP and TSMC jointly develop embedded MRAM IP using TSMC’s 16nm FinFET technology

With MRAM, automakers can launch new features more efficiently, accelerate OTA upgrades, and eliminate production bottlenecks

NXP plans to launch first samples of next-generation S32 regional processors and general-purpose automotive MCUs using this technology in early 2025

Eindhoven, the Netherlands - May 22, 2023 - NXP Semiconductors recently announced that it has collaborated with TSMC to deliver the industry's first automotive embedded MRAM (magnetic random access memory) using 16nm FinFET technology. In the transition to software-defined vehicles (SDVs), automakers need to support multiple generations of software upgrades on a single hardware platform. Combining NXP's high-performance S32 automotive processors with fast and highly reliable new generation non-volatile memory MRAM using 16nm FinFET technology creates an ideal hardware platform for the evolution to software-defined vehicles.

Flash memory takes about 1 minute to update 20MB of code, while MRAM only takes about 3 seconds , minimizing the downtime caused by software updates, and automakers can eliminate bottlenecks caused by long module programming. In addition, MRAM provides up to one million update cycles, with a durability that is ten times greater than flash memory and other emerging memory technologies, providing highly reliable technology for automotive failure defects.

Software-defined cars allow automakers to launch new features for comfort, safety, and convenience through OTA upgrades, extending the life of the car, enhancing its functionality and attractiveness, and increasing profitability. As software-based features become more and more common in cars, the frequency of updates will increase accordingly, and the speed and reliability of MRAM will become more important.

TSMC's 16FinFET embedded MRAM technology exceeds the stringent requirements of automotive-grade applications, has a durability of one million update cycles, supports reflow soldering, and retains data for up to 20 years at 150°C.

“NXP’s innovators are always quick to realize the potential of TSMC’s new process technologies, especially in demanding automotive applications,” said Dr. Kevin Zhang, senior vice president of business development at TSMC. “We are very excited to see our advanced MRAM technology being used in NXP’s S32 platform to enable the next generation of software-defined cars.”

“NXP and TSMC have successfully collaborated for decades to consistently deliver high-quality embedded memory solutions for the automotive market,” said Henri Ardevol, executive vice president and general manager of NXP’s automotive processor business. “MRAM is an innovative addition to NXP’s S32 automotive solutions portfolio and will play an important supporting role in next-generation vehicle architectures.”

Availability

Trial samples have been produced and are being evaluated. The first samples are planned to be available to major customers in early 2025.