IR launches reliable ultra-high-speed 1200 V IGBT

International Rectifier (IR), a global leader in power semiconductors and management solutions, has introduced a family of reliable, high-efficiency 1200V insulated gate bipolar transistors (IGBTs) designed for induction heating, uninterruptible power supplies (UPS), solar and welding applications.

全新超高速 1200V IGBT 系列采用纤薄晶圆场截止沟道技术，可显著降低开关及传导损耗，从而在较高频率下提升功率密度和效率。这些器件不仅为无需短路功能的应用进行了优化，如不间断电源、太阳能逆变器、焊接等应用，而且为电机驱动应用提供10微秒短路功能，与其它IR产品相辅相成。

"IR's new ultra-fast 1200V Trench IGBT series offers a variety of performance advantages that help improve system efficiency and reduce overall system cost by reducing switching losses and increasing switching frequency, reducing heat sink size and the number of magnetic components," said David Pan, IR's vice president of sales for Asia Pacific.

The new series includes packaged devices with currents between 20A and 50A, and bare die products with currents up to 150A. Its main advantages include a wide square reverse bias safe operating area (RBSOA), a positive VCE(on) temperature coefficient, and a low VCE(on) to reduce power dissipation and increase power density. In addition, the new devices can be built-in or without an ultra-fast soft recovery diode. The bare die is also equipped with pre-solder metal (SFM) to improve thermal performance, reliability and efficiency.

Product Specifications