SK Hynix: 12-layer stacked HBM3E development to be completed in the third quarter, overall memory supply may face shortage in the second half of the year

On April 25, according to Korean media Viva100, SK Hynix stated in a first-quarter earnings conference call held today that its 12-layer stacked (12Hi) HBM3E memory development is expected to be completed in the third quarter, while the overall memory supply may face shortages in the second half of the year.

Samsung Electronics has released its 12Hi HBM3E product, which has a single-stack capacity of 36GB. It has begun shipping samples to customers and is expected to go into mass production in the second half of the year.

SK Hynix said that this year customers are mainly focusing on 8Hi HBM3E memory, and SK Hynix will be prepared for the overall increase in customer demand for 12Hi HBM3E next year.

HBM3E memory is more expensive than HBM3 because the new product offers greater bandwidth and capacity.

During the conference call, SK Hynix said it would prioritize securing the supply of HBM memory, which has higher added value and greater demand visibility; the size of HBM memory chips is twice that of conventional DRAM.

These factors will relatively squeeze the wafer input of conventional DRAM, and production capacity is expected to be limited in the second half of the year.

SK Hynix estimates that the memory market will face tension if the recovery in PC and smartphone demand in the second half of the year leads to the depletion of existing inventory.

Regarding the future HBM4 memory, SK Hynix said that the application of hybrid bonding technology will be postponed because the technology is very difficult and its hasty introduction will bring risks to production capacity and quality.

SK Hynix will continue to use the existing MR-MUF (Mass reflow molded underfill) bonding technology in 16Hi HBM and will use it after hybrid bonding matures.