Top 10 Research Advances in China's Semiconductor Industry in 2021-EEWORLD

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In 2021, a total of 46 achievements were nominated for the second "Top Ten Research Advances in China's Semiconductors" selection event. In January 2022, a selection committee composed of 77 semiconductor experts selected 10 outstanding achievements after rigorous review and won the "Top Ten Research Advances in China's Semiconductors" in 2021. At the same time, 11 achievements won the nomination award for the "Top Ten Research Advances in China's Semiconductors" in 2021.

1. Rashba Valley Control and Quantum Hall Effect of Black Arsenic Semiconductors

The team of Xu Zhuan and Zheng Yi from Zhejiang University, in collaboration with Xia Qinglin from Central South University, discovered for the first time the strong spin-orbit coupling effect that can be continuously and reversibly regulated by an external electric field in the two-dimensional electronic state of the direct-band-gap semiconductor black arsenic. They also reported a new Rashba physical phenomenon of spin-valley coupling and its anomalous quantized behavior, providing new ideas for the development of high-efficiency, low-energy spintronic devices and the research of topological quantum computing.

The results were published in the journal Nature (Nature, 2021, 593: 56–60).

Rashba valley regulation and quantum Hall devices in black arsenic.

2. Controllable preparation of two-dimensional semiconductor single crystal wafers

The research group of Ye Yu, a researcher at the School of Physics, Peking University, has proposed a new method for artificial breeding, using phase change and recrystallization processes to prepare wafer-sized single-crystalline semiconductor phase molybdenum telluride (MoTe2) thin films. This two-dimensional in-plane epitaxy technology can realize the controllable preparation of two-dimensional semiconductor single crystal wafers directly on the device substrate without the need for a substrate as a template, providing a material basis for the interlayer interconnection of two-dimensional semiconductor materials.

The results were published in Science magazine (Science, 2021, 372(6538): 195–200).

Crystal orientation characterization of wafer-scale single-crystalline MoTe2 thin films.

3. New spectroscopic method to detect lattice dynamics at semiconductor interfaces

Gao Peng's research group at the Center for Quantum Materials Science at Peking University has developed a four-dimensional electron energy loss spectroscopy technique based on a scanning transmission electron microscope, breaking through the limitation of traditional spectroscopy methods that are difficult to characterize lattice dynamics at the nanoscale, and for the first time achieved the measurement of localized phonon modes at the interface of semiconductor heterojunctions. This method can directly measure the spatial distribution and dispersion relationship of localized phonon modes, thereby understanding physical properties such as interface thermal conductivity and carrier mobility.

The results were published in the journal Nature (Nature, 2021, 599: 399–403).

Four-dimensional electron energy loss spectroscopy to measure interface lattice dynamics: (a) Schematic diagram of the experimental principle; (b) The spatial distribution of the localized phonon state density measured experimentally; (c) The dispersion relation of the interface mode.

4. Fully flexible fabric display system

The team of Peng Huisheng/Chen Peining from Fudan University broke through the research paradigm of the traditional sandwich structure model of electronic devices and proposed a new route to construct micro-light-emitting devices at the interweaving points of polymer composite fibers. By solving the difficult problems of uniform loading of active materials on the fibers and low stability of the interweaving interface, they created a fully flexible fabric display system that integrates display, energy supply and other functions, achieving an organic fusion of device preparation and fabric weaving, and opening up a new direction in the field of flexible electronics.

The results were published in the journal Nature (Nature, 2021, 591: 240–245).

(a) Schematic diagram of the fabric structure. When voltage is applied to the luminescent warp and conductive weft, the luminescent material in the interwoven area is excited to emit light; (b) and (c) are photos of multi-color luminescent fabric and luminous points, respectively.

5. Multi-mode quantum relay based on absorption-type quantum memory

The research group led by Li Chuanfeng and Zhou Zongquan from the team led by Academician Guo Guangcan of the University of Science and Technology of China established the basic link of quantum relay based on absorption-type quantum memory for the first time, and successfully demonstrated multi-mode quantum relay based on the original "sandwich" structure solid-state quantum memory. This achievement has opened up a feasible direction for subsequent quantum relay research. The team is currently developing quantum storage technology combined with silicon-based devices, and is expected to further realize integrated quantum networks in the future.

This result was published as a cover story in Nature magazine (Nature, 2021, 594: 41–45).

An artistic representation of a multimode quantum relay experiment.

6. Neuromorphic hardware with integrated sensing, computing and storage based on homogeneous device architecture

The teams of Ye Lei and Miao Xiangshui from Huazhong University of Science and Technology and the team of Hu Weida from the Shanghai Institute of Technical Physics of the Chinese Academy of Sciences collaborated to innovatively propose a "sensing-computing-storage integration" neuromorphic chip architecture with brain-like functions based on silicon-based homogeneous devices of two-dimensional semiconductors. It achieved the integrated integration of photoelectric sensing, amplification computing, and information storage functions, providing a new idea for breaking through the von Neumann bottleneck and realizing brain-like intelligence.

The results were published in Science magazine (Science, 2021, 373(6561): 1353–1358).

On-chip integrated hardware with integrated sensing, computing and storage capabilities that mimic brain functions.

7. Stable α-FAPbI3 perovskite at room temperature and high humidity and its efficient and stable photovoltaic devices

The team of Academician Huang Wei and Professor Chen Yonghua from Nanjing Tech University creatively stabilized the α-FAPbI3 perovskite semiconductor at room temperature and high humidity (greater than 90%). They first proposed the use of methylammonium formate ionic liquid solvent to grow an oriented lead iodide film with nanoscale "ion channels", achieving the rapid formation of stable α-FAPbI3. The unpackaged device maintained 80% and 90% of its initial efficiency for 500 hours under continuous heating at 85 °C and continuous illumination, respectively.

The results were published in Science magazine (Science, 2021, 371(6536): 1359–1364).

Methylammonium formate ionic liquid solution, lead iodide "ion channel" and photovoltaic device stability.

8. High-brightness orbital angular momentum single-photon solid-state quantum light source

The research team of Wang Xuehua and Liu Jin from Sun Yat-sen University achieved both single-photon emission enhancement and efficient extraction of orbital angular momentum by precisely integrating quantum dots at the amplitude position of a micro-ring cavity with an angular grating and combining it with an ultra-low absorption zero-field mirror high-reflection structure. They were the first in the world to realize a high-brightness solid-state single-photon source that can carry orbital angular momentum, and are expected to provide miniaturized, integrable, and easily scalable semiconductor core optical quantum devices for high-dimensional quantum information processing.

The results were published in the journal Nature Nanotechnology (Nature Nanotechnology, 2021, 16(3): 302–307).

High-brightness orbital angular momentum single-photon source based on quantum dot-microring cavity coupling.

9. Efficient p-type doping of ultra-wide bandgap nitride semiconductor materials

The research team of Li Dabing from the Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, and Researcher Deng Huixiong from the Institute of Semiconductors, Chinese Academy of Sciences, have collaborated to solve the international problem of p-type doping in wide-bandgap nitride materials. In response to the fundamental physical limitations of ultra-high acceptor activation energy, they proposed a method of quantum engineering non-equilibrium doping to regulate the position of the top energy level of the valence band, thereby significantly reducing the activation energy. This has achieved high hole concentration p-type ultra-wide bandgap nitride materials, providing a new idea for solving the problem of doping in wide-bandgap semiconductors and is expected to promote the further development of the wide-bandgap semiconductor industry.

The results were published in the journal Light: Science & Applications (Light: Science & Applications, 2021, 10: 69).

The physical mechanism of quantum engineering non-equilibrium doping to reduce acceptor activation energy and its application in deep ultraviolet LEDs.

10. High-efficiency capacitive sensing chip integrated on silicon substrate

Capacitive sensing chips are the data sensing infrastructure in the era of industrial Internet and the Internet of Everything. The research team of Huang Ru and Ye Le from Peking University has realized an on-chip integrated dynamic charge domain high-efficiency capacitive sensing chip based on domestic silicon-based CMOS technology. Through the first-proposed dynamic charge domain power consumption self-sensing technology and dynamic range adaptive sliding technology, the energy efficiency of data perception has been significantly improved, the performance degradation and reliability problems caused by complex working environments have been solved, and the application of environmental humidity sensing has been demonstrated, breaking the world energy efficiency record of similar chips and the foreign blockade.

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Keywords：semiconductor Reference address：Top 10 Research Advances in China's Semiconductor Industry in 2021

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