Semiconductor Device Physics (Shi Min, National Chiao Tung University)

The content of this course proceeds from the shallower to the deeper, starting with the basic physics and basic operations of capacitor structures, and then discussing the structure and operation of MOSFETs and NVSMs, allowing students taking the course to gain a glimpse into the mysteries of the most important components of semiconductors.

1. Semiconductor Physics (Semiconductor Physics)
2. The concept of pn junction (pn Junction)
3. Metal Oxygen Semicapacitor (MOS Capacitor)
4. Metal Oxygen Semiconductor Field Effect Transistor (MOSFET)
5. Non-volatile semiconductor memory (Non- Volatile Semiconductor Memory, NVSM)

• Chapter 1：Summary (1 minutes and 44 seconds)

• Chapter 2：Course introduces the evolution of the electronics and semiconductor industry (9 minutes and 4 seconds)

• Chapter 3：Basic structure and types of semiconductor components, development of semiconductor components and circuit technology (10 minutes and 41 seconds)

• Chapter 4：Component technology development trends (5 minutes and 59 seconds)

• Chapter 5：Semiconductor Materials and Crystal Structure (20 minutes and 4 seconds)

• Chapter 6：Valence bond and energy band (13 minutes and 23 seconds)

• Chapter 7：intrinsic carrier concentration (16 minutes and 47 seconds)

• Chapter 8：donor and receptor (18 minutes and 19 seconds)

• Chapter 9：Carrier drift drift 1 (12 minutes and 20 seconds)

• Chapter 10：Carrier drift drift 2 (15 minutes and 17 seconds)

• Chapter 11：carrier diffusion diffusion (7 minutes and 53 seconds)

• Chapter 12：Carrier generation and coincidence (10 minutes and 59 seconds)

• Chapter 13：continuous equation (18 minutes and 39 seconds)

• Chapter 14：Thermionic_emission and tunneling (6 minutes and 43 seconds)

• Chapter 15：Space Charge and High Electric Field Effect (11 minutes and 33 seconds)

• Chapter 16：Basic semiconductor technology (8 minutes and 26 seconds)

• Chapter 17：thermal equilibrium state (12 minutes and 33 seconds)

• Chapter 18：Depletion region and depletion capacitor 1 (12 minutes and 15 seconds)

• Chapter 19：Depletion region and depletion capacitor 2 (10 minutes and 25 seconds)

• Chapter 20：Current and voltage characteristics 1 (16 minutes and 42 seconds)

• Chapter 21：Current and voltage characteristics 2 (12 minutes and 10 seconds)

• Chapter 22：store charge (5 minutes and 19 seconds)

• Chapter 23：junction collapse (13 minutes and 37 seconds)

• Chapter 24：Ideal MOS Capacitor 1 (5 minutes and 57 seconds)

• Chapter 25：Ideal MOS Capacitor 2 (5 minutes and 46 seconds)

• Chapter 26：SiO2Si MOS capacitor (4 minutes and 48 seconds)

• Chapter 27：Carrier transport and collapse in insulating layers (6 minutes and 59 seconds)

• Chapter 28：Introduction to MOSFET (5 minutes and 55 seconds)

• Chapter 29：Basic operating characteristics 1 (5 minutes and 56 seconds)

• Chapter 30：Basic operating characteristics 2 (5 minutes and 46 seconds)

• Chapter 31：Component Type and Starting Voltage Threshold Voltage (5 minutes and 10 seconds)

• Chapter 32：short channel effect (3 minutes and 38 seconds)

• Chapter 33：Component structure and design (6 minutes and 3 seconds)

• Chapter 34：Introduction to CMOS inverter and new MOSFET (5 minutes and 17 seconds)

• Chapter 35：Introduction to MSRAM DRAM and Semiconductors (5 minutes and 10 seconds)

• Chapter 36：Introduction to non-volatile semiconductor memory NVSM (3 minutes and 52 seconds)

• Chapter 37：floating gate concept (4 minutes and 4 seconds)

• Chapter 38：Historical development of floating gate NVSM (6 minutes and 37 seconds)

• Chapter 39：Applications of NVSM (4 minutes and 58 seconds)

• Chapter 40：Scaling Challenge (2 minutes and 56 seconds)

• Chapter 41：Alternative device structures (3 minutes and 44 seconds)

• Chapter 42：Exclusive interview with a pair of junior students about their expectations (1 minutes and 35 seconds)

• Chapter 43：Exclusive interview with two inventors who don’t use mobile phones (2 minutes and 18 seconds)

• Chapter 44：Exclusive interview with the bell lab where we stayed together for the year 3 (4 minutes and 25 seconds)

• Chapter 45：Exclusive Interview with Four Inventions of NVSM (2 minutes and 31 seconds)

• Chapter 46：Exclusive interview with five predictions for the future technology industry (2 minutes and 6 seconds)