Countdown to Infineon Wide Bandgap Forum 2024丨Multiple innovative products debut
Infineon is committed to promoting sustainable energy solutions through its innovative wide bandgap (WBG) semiconductor technology. This time,
the Infineon Wide Bandgap Forum
will showcase a number of CoolSiC™ innovative products for the first time, together with Infineon's smart home solutions, as well as electric transportation and mobility solutions in Hall 4 of Electronica China 2024 (Munich Shanghai Electronics Show). Let the editor take you to have a quick look!
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Looking forward to your visit
July 9
Infineon Technologies will present its wide bandgap total solution at the forum
Booth set up Three core areas
Green energy and industrial areas
2000V CoolSiC™ MOSFET and
Diode makes its public debut
This year, Infineon launched the first CoolSiC™ MOSFET discrete device on the market with a breakdown voltage of 2000V. It has low switching losses and uses a TO-247PLUS-4-HCC package with a creepage distance of 14mm and an electrical clearance of 5.4mm. It is suitable for applications such as 1500VDC photovoltaic string inverters, energy storage systems, and electric vehicle charging. In addition, the latest 2000V 40A CoolSiC™ diode will also be unveiled at the booth. Welcome to the site to find out!
Next-generation CoolSiC™ MOSFET G2 products
Officially unveiled the mystery
Infineon Technologies launched the new generation of CoolSiC™ MOSFET Gen2 technology this year. Compared with the previous generation of products, the new CoolSiC™ MOSFET 650V and 1200V Generation 2 technologies have improved the main performance indicators of MOSFET (such as energy and charge storage) by 20% while ensuring quality and reliability. It is worth mentioning that this product has the lowest R ds(on) on-resistance in the industry, and a single single-tube package can be as low as 7 mΩ. While ensuring low on-resistance, this technology promises a short-circuit capability of 2μs, which is far ahead in the industry. In addition, the maximum operating junction temperature of the new generation of CoolSiC™ MOSFET Gen2 technology is directly increased to 200 degrees Celsius, which is a significant improvement compared to the first generation of products.
Comprehensive display of Easy SiC module product series
Presenting a complete product line lineup
Infineon's Easy modules are scalable and flexible. The Easy 1B and 2B modules have been on the market for many years and are widely used. In order to ensure that higher power systems can be designed with the same module height, Infineon has further developed the Easy 3B and 4B modules. These two packages can bring higher power and greater current, and use 1200V CoolSiC™ MOSFET chips to better meet the requirements of emerging applications. At present, the 1200V CoolSiC™ MOSFET M1H Easy module has a rich topology, including half-bridge, full-bridge, three-phase bridge, three-level and boost. Among them, the Easy3B module of the half-bridge has a minimum R ds(on) of 2mΩ. This booth will showcase the most complete lineup of Easy silicon carbide products for the first time.
Smart home area
GaN Product Portfolio
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Smart induction cooker
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Vienna PFC Scheme
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Magic Leap 2
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Radar gesture sensing demo on LED matrix
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PSOC™ Edge “Rocket Ship Lander”
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E-mobility and mobility zones
Using Infineon's second generation HybridPACK™ Drive
Motor Controller for Silicon Carbide Power Modules
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Reflowable discrete devices parallel three-phase full-bridge solution
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HybridPACK™ Drive Product Family
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Car Charger Applications - Infineon Discrete Devices Portfolio
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10kW GaN charger
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