The second Yangtze River Delta-Guangdong-Hong Kong-Macao Greater Bay Area Integrated Circuit
"Taihu Core" Entrepreneurship Competition
is in full swing. At present, the road shows in the three preliminary competition areas of Xi'an, Shenzhen, and Shanghai have been successfully concluded. In the next August, the winners of the preliminary competition will compete for the championship in Wuxi.
In the Xi'an competition area, the first stop of the preliminary competition, many entrepreneurial projects in the field of semiconductor equipment and materials have emerged.
What are the highlights of these chip startup projects? What innovations have been achieved? What are the prospects for industrialization?
In this regard, Master Xin specially planned
the
"Taihu Core Sound"
column to talk face-to-face with the participating teams about semiconductor entrepreneurial projects.
Industrialization of wide bandgap semiconductors
Xi'an Huahede New Material Technology Co., Ltd.
Xi'an Huahede New Materials Technology Co., Ltd. (hereinafter referred to as "Huahede New Materials") was established in 2019 and focuses on third-generation semiconductor materials. The name of the competition project is "
Wide Bandgap Semiconductor Industrialization
"
.
According to Zhu Naxin, chairman of Huahede New Materials and project initiator,
the project team is centered on more than 10 Ph.D.s who have returned from Europe and the United States
. The members have diverse backgrounds and are involved in crystal growth, semiconductor materials, microelectronics, computer simulation, Machinery, automatic control, MBA management and other fields. In addition, the company also hires foreign experts who have long been engaged in SiC materials and related equipment as technical consultants.
This roadshow project "Wide Bandgap Semiconductor Industrialization" is dedicated to researching the growth and large-scale preparation technology of the third-generation semiconductor material SiC crystal and newer-generation semiconductor materials Ga2O3, AlN technology, etc.
According to Zhu Naxin, the growth of SiC crystals is a very complicated process, because SiC crystals do not exist in nature under normal temperature and pressure, so they must change from the gas phase to the solid phase under a special process, and this growth process is easy to form defect. Because of this, the supply of SiC crystals on the market exceeds demand.
"Conservatively estimated, the ratio of supply and demand is 1:10
."
Zhu Naxin said that the market’s desire for the localization of SiC crystals makes him feel that he has a mission. “People engaged in the semiconductor industry,
in addition to pursuing economic effects, must also have feelings about family and country
. If you don’t have feelings, you will not be able to persist in your dream. of."
Talking about this competition, he said that he hopes to gain recognition from more industry experts and the capital community through this platform, because "only
by working together as a team can we get things done
."
Microjet laser advanced technology
Xi'an Shengguang Silicon Research Semiconductor Technology Co., Ltd.
Xi'an Shengguang Silicon Research Semiconductor Technology Co., Ltd. (hereinafter referred to as "Shengguang Silicon Research") was established in February 2021. It is a semiconductor equipment R&D and manufacturer. The name of the competition project is
"Cutting-edge processing based on hard and brittle materials-Micro Jet laser advanced technology”
.
According to Liang Jianhua, assistant general manager of Shengguang Silicon Research, the advanced micro-jet laser technology mastered by the company is unique in the field of third-generation semi-cutting. It
has successfully completed the rounding, slicing and dicing of 6-inch silicon carbide ingots
. At the same time, the technology is compatible 8-inch crystal round slices.
The principle of the advanced micro-jet laser technology is to couple the laser with water, allowing the laser to be fully reflected in the water flow, and
the water flow plays a guiding role similar to that of an optical fiber
.
In traditional laser cutting, the accumulated and conducted energy can easily cause thermal damage to both sides of the SiC wafer cutting path. However, due to the action of water columns, micro-jet laser can quickly take away the residual heat of each pulse, making the cutting path clean and neat.
In terms of industrial applications, the micro-jet laser solution has four major advantages in processing SiC wafers. First, there is no need to focus, the laser in the water jet is completely parallel, and
it can achieve loss cutting of less than 30 microns
, ensuring high-quality processed walls and trimming; Second, the water jet avoids the accumulation of processing waste. The high-energy water jet disperses waste ions to avoid processing burrs. The damage layer is 3-4 microns, which reduces the difficulty of subsequent polishing.
Third, the cooling effect of water jet avoids thermal damage and material changes, making the wafer warpage reach about 3.5 microns, ensuring the consistency of the material; fourth,
the loss of processing equipment is small
, which is much lower than that of diamond wire processing, eliminating the need for replacement. Time for consumables and time for adjusting equipment.
Regarding the current progress of the project, Liang Jianhua said that as of October last year,
the sales of advanced micro-jet laser technology equipment to domestic leading silicon carbide companies had been completed
. Therefore, since the end of last year, Shengguang Silicon Research has begun to expand into the fields of other hard and brittle materials such as gallium nitride, ultra-wide bandgap semiconductor gallium oxide, diamond, ceramic composite substrates, aerospace composite materials, scintillation crystals,
and currently has orders
.
Pioneer in gallium oxide epitaxy technology
Gallium oxide epitaxy technology research team
The gallium oxide epitaxy technology research team comes from the School of Microelectronics of Xi'an University of Electronic Science and Technology. Their entry project revolves around gallium oxide epitaxy equipment. The project name is "
Gallium Core Micro-Pioneering the Fourth Generation Ultra-Wide Bandgap Semiconductor Gallium Oxide Epitaxy Technology
".
According to team member Liu Dinghe, the project team is affiliated to the team of Academician Hao Yue of Xi'an University of Electronic Science and Technology. The research group is
the main initiator of domestic wide-bandgap (GaN, SiC) and ultra-wide-bandgap (Ga2o3, diamond) semiconductor technology research. As a unit and the main force in innovative research
, its research scale and research level have always been in a leading position in the country.
For this competition, the gallium oxide epitaxy technology research team independently developed a low-cost non-vacuum atomized chemical deposition Mist-CVD growth equipment system
based on previous research
, and studied the oxide film doping process to form energy band regulation and carrier The stable process system with controllable concentration achieves uniform growth of large-area oxidized single crystal films.
Compared with traditional epitaxial growth technologies such as HVPE and MOCVD,
the oxide film grown epitaxially by Mist-CVD has a higher level of crystal quality
. In addition, the cost advantage of Mist-CVD equipment is even more obvious, only one-twentieth of MOCVD equipment.
As for the current domestic development of this track, Liu Dinghe said that there are only a handful of domestic commercial companies engaged in the preparation of gallium oxide materials, and they are all in their infancy. After years of development by the project team,
the Mist-CVD prototype has been optimized to the latest fourth generation
, and has provided multiple batches of customized gallium oxide epitaxial wafer products to research teams from multiple universities.
Talking about the challenges that may be faced by the industrialization of the project, Liu Dinghe said that the relevant experience in marketization and industrialization is a shortcoming that their team needs to make up for. "We need to understand the needs of the market and
develop products that meet the needs of the market
." In addition, funds , Talents are also needed for the further implementation of the project.
Next, the team plans to inject capital to establish "Gallium Core Weite Technology Co., Ltd.". After receiving financial support, it will continue to carry out the improvement of Mist-CVD equipment and the exploration of industrialized and stable oxide film epitaxy.
Luoyang Sanruibao Nanotechnology Co., Ltd.
Luoyang Sanruibao Nanotechnology Co., Ltd. was established in 2014, and the name of the competition project is "Quantum Alumina".
According to project initiator Xu Ronghui, a professor at Henan University of Science and Technology, quantum alumina is a nanocrystalline material.
The project name highlights the word "quantum", specifically referring to the dispersed state of single particles
- basically no agglomeration, let alone chemical sintering. Secondly, Because of its energy quantum properties, it is called quantum alumina.
According to reports, the project originated from an "industry-university-research-military" activity in 2008, which involved the fields of nanomaterials, energy conservation, nanomaterial applications, and future nanomanufacturing.
After more than ten years of laboratory research and development, amplification, and industrial verification, it was formed The product "3 nanometer raw crystal" and "flake/high purity/high dispersion α-alumina" were launched
.
Since the product is corundum phase, Mohs hardness is 9.0, and has a special flake structure, it has
broad application prospects
and can be used as chip lithography machines, aerospace engines, vacuum evaporation machines, large electron colliders and third-generation semiconductors. Fine polishing materials are used for precision processing of materials. They can also be used as catalyst carriers for automobile exhaust purifiers and key materials for fast charging of solid-state batteries.
Previously, the team has invested more than 5 million in R&D and industrialization in Luoyang, and
successfully verified it in 2018.
At this stage, it has a stable customer base and potential customers. Xu Ronghui said that the project has filled the domestic technology gap. From the perspective of technical parameters,
China and the United States are currently at the same technical level, while Japan is relatively lagging behind
.
In this participation, Xu Ronghui hopes to use the Taihu Core Entrepreneurship Competition platform to connect with more investors, jointly implement the project, and "contribute to the national chip industry."
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This
article
is original by Master Xin, and the content only represents the personal views of the interviewees. If you have any questions,
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