RDA launches the first domestically produced LTE RF power amplifier and filter integrated chip RPF5401

On September 25, 2017, RDA Microelectronics (hereinafter referred to as "RDA"), a leading RF and mixed signal chip supplier in China, announced today the launch of the first domestically produced LTE RF power amplifier and filter integrated product RPF5401 , to help promote the popularization of China Mobile's B41 high-power terminal (hereinafter referred to as "HPUE").

B41 has a wide frequency band of 2496~2690MHz, so it can transmit mobile data quickly. However, due to the greater attenuation of high-frequency transmission, the coverage of high-frequency bands is significantly lower than that of medium and low-frequency bands; at the same time, due to modulation and transmission power, the coverage of terminal transmission is also significantly lower than the coverage of reception. Increasing the transmission power of the terminal can provide more perfect network coverage and user experience.

The international mobile communications standards organization 3GPP, together with China Mobile, Sprint and other operators, launched the Power Class 2 terminal standard, called HPUE. Compared with traditional TD-LTE equipment, HPUE has a 3dB increase in power and a 30% increase in coverage, with coverage close to that of medium and low frequency bands. It can not only optimize the investment in communication infrastructure equipment, but also improve the user experience of terminals at the edge of base stations. With the active promotion of operators such as China Mobile, it is expected that more terminals will support HPUE next year.

HPUE is one of the most challenging technologies in the field of cellular communication RF front-end, and was previously mastered by only a few European and American companies. RPF5401 needs to double the transmission power of B41 while controlling the power consumption level, which is quite difficult to develop. RPF5401 can support B38, B40, B41 and B7 at the same time, and integrate filters of B40 and B41, which can not only meet the basic needs of customers, but also have corresponding flexibility. The package size is 3mm*4mm, and it adopts advanced GaAs flip-chip PA technology, which not only has better heat dissipation effect, but also higher transmission power. The highly integrated design can reduce the line loss and optimize the impedance relationship between PA and Filter.

"RDA has launched the first domestically produced 'PA+Filter' integrated chip, breaking through the most challenging HPUE technology in the current RF front end, further narrowing the gap with international leading companies, which reflects RDA's unremitting efforts to catch up with the world's first-class level," said Dr. Li Liyou, Chairman of RDA. "In the future, 5G technology will generally have higher frequency bands, HPUE will be further popularized, and the market prospects are very promising. The successful localization of HPUE technology has very important long-term significance."