IPLK70R600P7ATMA1 datasheet, PDF

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IPLK70R600P7ATMA1: DescriptionSurface mount type N channel 700 V - - PG-TDSON-8; CategoryDiscrete semiconductor The transistor; File Size367KB，3 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

IPLK70R600P7ATMA1 Overview

The Infineon CoolMOS ™ P7 Super Junction (SJ) MOSFET family is designed to address the typical challenges in the low-power SMPS market by delivering superior performance and ease of use in an enhanced form factor and price competitiveness. The ThinPAK 5x6 package features a very small size of 5x6 mm² and an ultra-thin profile with a height of 1 mm. These features, combined with its baseline low parasitic performance, enable significant form factor reduction and help increase power density. This combination makes CoolMOS™ P7 in ThinPAK particularly suitable for its target application. The 700V CoolMOS™ P7 series is optimized for flyback topologies. Very low losses Excellent thermal behavior Integrated ESD Protection diodes Low switching glossary (Eoss) Fully compliant with JEDEC for industrial applications Best in class quality and reliability Low EMI Broad RDS (turn-on) values Fully optimized product portfolio

IPLK70R600P7ATMA1 Parametric

Parameter Name	Attribute value
category	Discrete semiconductor;The transistor
Maker	Infineon
series	CoolMOS™ P7
Package	Tape and Reel (TR) Cut Tape (CT)
FET type	N channel
technology	MOSFET (metal oxide)
Drain-source voltage (Vdss)	700 V
Current at 25°C - Continuous Drain (Id)	-
Drive voltage (maximum Rds On, minimum Rds On)	-
On-resistance (maximum value) at different Id and Vgs	-
Vgs(th) (maximum value) when different Id	-
Vgs (maximum value)	-
FET function	-
Power dissipation (maximum)	-
Operating temperature	-
Installation type	surface mount type
Supplier device packaging	PG-TDSON-8
Package/casing	8-PowerTDFN
Basic product number	IPLK70

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