After the 5-inch heavily arsenic-doped single crystal was produced, Haina Semiconductor's first 6-inch heavily arsenic-doped single crystal was produced.

On September 23, Zhejiang Haina Semiconductor Co., Ltd. (hereinafter referred to as "Haina Semiconductor") produced the first 6-inch heavily arsenic-doped single crystal.

According to the official news of Zhonghe Technology, the successful pulling of heavily doped arsenic single crystals marks the official start of mass production of Haina Semiconductor's "100 tons per year 4-8 inch IC-grade single crystal silicon and its products technical transformation project". With the successful trial pulling of heavily doped arsenic single crystals, Haina Semiconductor's product structure will be extended to all heavily doped series of polished silicon wafers for epitaxial substrates.

It is worth noting that on September 19, Haina Semiconductor's first 5-inch heavily arsenic-doped single crystal was produced.

According to Qichacha, Haina Semiconductor was established in September 2002 and is a wholly-owned subsidiary of Zhonghe Technology. The company's business scope includes production: monocrystalline silicon and its products; technology development, technical services, and results transfer: monocrystalline silicon and its products, semiconductor components, etc.