Building a complete silicon carbide industry chain, the 16 billion yuan Changsha Sanan third-generation semiconductor project started

On July 20, the groundbreaking ceremony for Changsha Sanan’s third-generation semiconductor project was held in Changsha High-tech Zone.

The Changsha Sanan third-generation semiconductor project, which started construction today, has a total investment of 16 billion yuan and covers a total area of ​​1,000 acres. It mainly builds a production base for substrates (silicon carbide), epitaxy, chips and packaging industries with independent intellectual property rights. After the project is completed and put into production, it will form an industry scale of over 10 billion yuan, and drive the output value of upstream and downstream supporting industries to exceed 100 billion yuan.

According to the Changsha Evening News, Zheng Jianxin, deputy secretary of the Changsha Municipal Party Committee, mayor, and secretary of the Party Working Committee of Hunan Xiangjiang New District, said that the Changsha Sanan third-generation semiconductor project, as one of Changsha's 17 landmark key manufacturing projects, will form a complete silicon carbide industry chain from crystal growth - substrate production - epitaxial growth - chip preparation - packaging in Changsha, which will surely become a major driving force for the development of Changsha's new generation of semiconductors and integrated circuit industry chains.

On June 17 this year, Sanan Optoelectronics issued an announcement stating that the company plans to establish a subsidiary in Changsha to invest in the construction of a third-generation semiconductor industrial park project with a total investment of 16 billion yuan.

The project investment and construction includes but is not limited to the research and development and industrialization projects of third-generation compound semiconductors such as silicon carbide, including the crystal growth-substrate production-epitaxial growth-chip preparation-packaging industry chain, and the research and development, production and sales of 6-inch SIC conductive substrates, 4-inch semi-insulating substrates, SIC diode epitaxy, SiC MOSFET epitaxy, SIC diode epitaxy chips, SiC MOSFET chips, silicon carbide device packaged diodes, and silicon carbide device packaged MOSFETs in the Changsha High-tech Industrial Development Zone Management Committee (hereinafter referred to as "Party A").