Lee Jae-yong: Samsung plans to launch 3nm GAA process chip for the first time

Publisher:reaper2009Latest update time:2020-01-03 Source: 互联网Keywords:3nm Reading articles on mobile phones Scan QR code
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According to Korean media reports, Samsung Electronics leader Lee Jae-yong today discussed Samsung's strategic plan to launch the first 3nm GAA process chip.


The report said that Lee Jae-yong visited Samsung Electronics' semiconductor R&D center in Hwaseong, Gyeonggi Province yesterday. This was also Lee Jae-yong's first official trip in 2020. During the trip, he listened to Samsung Electronics' 3nm process technology report and discussed the next-generation semiconductor strategy with the head of the semiconductor department.

According to Samsung Electronics, Lee discussed Samsung's plan to use the latest 3nm GAA process technology under development to manufacture cutting-edge chips. GAA is considered an upgraded version of the current FinFET technology, which will enable chipmakers to further reduce size.

Last April, Samsung Electronics completed the development of 5nm FinFET process technology using EUV. Now the company is researching the next-generation process technology (i.e. 3nm GAA). Samsung Electronics said that compared with the 5nm process, the logic area efficiency of 3nm GAA technology has increased by more than 35%, power consumption has decreased by 50%, and performance has increased by about 30%.

This move also echoes Samsung's previous statement that it will go all out to attack the semiconductor market of non-DRAM and NAND Flash chips. Last year, Samsung announced an investment plan equivalent to US$111.85 billion, with the goal of making Samsung the world's largest semiconductor chip manufacturer.


Keywords:3nm Reference address:Lee Jae-yong: Samsung plans to launch 3nm GAA process chip for the first time

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