ON Semiconductor Releases High-Performance, Low-Loss SUPERFET V MOSFET Series

ON Semiconductor Launches High-Performance, Low-Loss SUPERFET V MOSFET Series for Server and Telecom Applications

New devices offer superior switching characteristics, enabling power supplies to meet 80 PLUS Titanium efficiency standards

December 8, 2021 - ON Semiconductor, a leader in smart power and smart sensing technologies, has released a new 600 V SUPERFET ^Ò V MOSFET series. These high-performance devices enable power supplies to meet stringent energy efficiency regulations such as 80 PLUS Titanium, especially under challenging 10% load conditions. The three product groups under the 600 V SUPERFET series - FAST, Easy Drive and FRFET are optimized to provide class-leading performance in a variety of different applications and topologies.

The 600 V SUPERFET V series offers excellent switching characteristics and low gate noise, which reduces electromagnetic interference (EMI), a significant benefit for server and telecom systems. In addition, the robust body diode and high VGSS (DC ± 30 V) enhance system reliability.

“The 80 Plus Titanium certification, aimed at addressing climate change, requires server and data storage hardware to achieve 90% efficiency levels at 10% load and 96% efficiency at 50% load,” said Asif Jakwani, senior vice president and general manager of ON Semiconductor’s Advanced Power Division. “Our SUPERFET V family of FAST, Easy Drive and FRFET versions are meeting these requirements, providing a robust solution to ensure continued system reliability.”

The FAST version provides very high efficiency in hard-switching topologies such as high-side PFC and is optimized to provide lower gate charge (Qg) and EOSS losses for fast switching. The initial devices in this version include the NTNL041N60S5H (41 mW RDS (on)) and NTHL185N60S5H (185 mW RDS (on)), both in TO-247 packages. The NTP185N60S5H is available in a TO-220 package, while the NTMT185N60S5H is available in a 8.0mm x 8.0mm x 1.0mm Power88 package, guaranteed to meet moisture sensitivity level MSL 1, and has a Kelvin source architecture to improve gate noise and switching losses.

The Easy Drive versions are suitable for hard-switching and soft-switching topologies and include an internal gate resistor (Rg) and optimized internal capacitance. They are suitable for general use in many applications, including PFC and LLC. In these devices, the internal Zener diode between gate and source has an RDS(on) of more than 120 mW , which reduces stress on the gate oxide and improves ESD robustness, thereby improving packaging yield and reducing defective rates. The two devices currently available, NTHL099N60S5 and NTHL120N60S5Z, have RDS(on) of 99 mW and 120 mW , both in TO-247 packages.

Fast recovery (FRFET ^Ò ) versions are suitable for soft switching topologies such as phase-shifted full bridge (PSFB) and LLC. Their advantage is a fast body diode and provides reduced Qrr and Trr . The strong diode durability ensures higher system reliability. The NTP125N60S5FZ with built-in Zener diode has an RDS(on) of 125 m W in a TO-220 package, while the NTMT061N60S5F has an RDS(on) of 61 m W in a Power88 package. The lowest loss device is the NTHL019N60S5F with an RDS(on) of only 19 m W in a TO-247 package.