Power semiconductor devices

Power semiconductor devices are an important branch of semiconductor devices. Like microelectronic chips (integrated circuit chips), they are both in the "stuck" range at this stage. Someone likened the relationship between power semiconductor devices and microelectronic chips like this: If the role of microelectronic chips can be compared to the human brain, the role of power semiconductor devices can be compared to the human heart, providing energy for the brain, and both are indispensable. Early power semiconductor devices, such as high-power diodes and thyristors (Thyristors, also known as silicon-controlled rectifiers - SCRs), were mainly used in industrial and power systems, so they are also called power electronic devices in China. Typical power processing functions include: frequency conversion, voltage conversion, current conversion, power amplification, power management, etc. With the rapid development of new power semiconductor devices represented by power MOS devices, the 4C market represented by computers, communications, consumer products and automotive electronics currently accounts for two-thirds of the power semiconductor application market. Therefore, power semiconductor devices are no longer the "power electronic devices" in people's minds. They are as indispensable as the human heart.

        "Power Semiconductor Devices" is a professional course in the electronic science and technology major and an important content of the provincial quality resource sharing course "Solid Electronic Devices". This course is based on the physics of semiconductor devices, with diodes, thyristors, power MOSFETs and IGBTs as representatives, analyzing their working principles and basic characteristics, and first establishing the intrinsic relationship between the working principles and basic characteristics of devices and microscopic mechanisms. On this basis, master the intrinsic relationship between performance, structural parameters and process parameters, and be able to design devices based on specified parameters.

• Chapter 1：Lecture (7 minutes and 0 seconds)

• Chapter 2：introduction (28 minutes and 55 seconds)

• Chapter 3：Schottky basic theory (27 minutes and 48 seconds)

• Chapter 4：Schottky diode blocking characteristics (10 minutes and 3 seconds)

• Chapter 5：Schottky diode on-state characteristics (19 minutes and 41 seconds)

• Chapter 6：JBS (8 minutes and 36 seconds)

• Chapter 7：PiN diode reverse blocking characteristics and design (22 minutes and 21 seconds)

• Chapter 8：PiN diode termination technology (26 minutes and 8 seconds)

• Chapter 9：i-region carrier distribution of PiN diode on-state characteristics (11 minutes and 13 seconds)

• Chapter 10：PiN diode on-state characteristics i-region body voltage drop (17 minutes and 35 seconds)

• Chapter 11：On-state voltage drop of PiN diode on-state characteristics (16 minutes and 48 seconds)

• Chapter 12：PiN diode reverse recovery characteristics (31 minutes and 46 seconds)

• Chapter 13：MPS (20 minutes and 24 seconds)

• Chapter 14：Overview Thyristors (23 minutes and 27 seconds)

• Chapter 15：Thyristor blocking voltage (29 minutes and 45 seconds)

• Chapter 16：Parameter design of long base area of ​​thyristor (21 minutes and 12 seconds)

• Chapter 17：Selection of Thyristor Chip Thickness (13 minutes and 40 seconds)

• Chapter 18：Calculation of thyristor trigger characteristics and trigger parameters (32 minutes and 52 seconds)

• Chapter 19：On-state characteristics of thyristor (24 minutes and 18 seconds)

• Chapter 20：Turn-on and characteristics of thyristor (33 minutes and 17 seconds)

• Chapter 21：didt of thyristor (14 minutes and 40 seconds)

• Chapter 22：Turn-off characteristics of thyristor (31 minutes and 52 seconds)

• Chapter 23：thyristor dvdt (23 minutes and 52 seconds)

• Chapter 24：Thyristor power consumption (12 minutes and 42 seconds)

• Chapter 25：Power MOSFET(1) (28 minutes and 58 seconds)

• Chapter 26：Power MOSFET(2) (20 minutes and 2 seconds)

• Chapter 27：Power MOSFET(3) (24 minutes and 42 seconds)

• Chapter 28：IGBT(1) (12 minutes and 18 seconds)

• Chapter 29：IGBT(2) (14 minutes and 47 seconds)

• Chapter 30：IGBT(3) (10 minutes and 31 seconds)

• Chapter 31：IGBT(4) (14 minutes and 45 seconds)