STMicroelectronics' HB2 650V IGBT series uses the latest third-generation Trench Field Stop (TFS) technology to improve energy efficiency and performance in designs of medium- and high-speed applications such as PFC converters, welding machines, uninterruptible power supplies (UPS), solar inverters, etc. The series also includes automotive-grade products that meet the AEC-Q101 Rev. D standard.
The new HB2 series belongs to the STPOWER™ product family. The lower (1.55V) VCEsat saturation voltage ensures excellent conduction performance; the lower gate charge enables fast switching under low gate current conditions, improving dynamic switching performance; excellent thermal performance helps to maximize reliability and power density, while the new series is still a very competitive product on the market.
The HB2 series IGBTs offer three internal diode options: a fully rated diode, a half-rated diode, or a protection diode to prevent accidental reverse bias, giving developers more design freedom to optimize dynamic performance based on specific application needs.
The first of the new 650V devices, the 40A STGWA40HP65FB2, is available now in a TO-247 long-lead package.
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