Memory chip manufacturers start a new round of process competition
Latest update time：2023-06-25 12:21
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Samsung Electronics 12nm-class 16Gb DDR5 DRAM
近日，三星、SK海力士等DRAM厂商争相爆出有关第五代1bDRAM的最新研发进展，新一代产品在数据处理速度、功耗、耗电量等方面都有了显著提升，在移动设备、智能车辆、数据中心以及人工智能等领域的应用将更加广泛。英特尔、英伟达、AMD等厂商开始了新一轮的订购，
存储
厂商也将1bDRAM视为改善业绩的关键产品。同时，存储厂商开始了对下一代工艺节点1c的研发。有消息说，三星将跳过1bDRAM，直接研发1cDRAM。面向当前的1b竞争与未来的1c竞争，
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厂商已经开始暗中较劲。
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1bDRAM research and development is in full swing
For a long time, major memory manufacturers have classified the previous generation of DRAM chips according to 1X, 1Y, and 1Z processes. 1Xnm process is equivalent to 16-19nm process technology, 1Ynm is equivalent to 14-16nm process technology, and 1Znm process is equivalent to 12-14nm process technology. . The new generations of 1a, 1b and 1c represent 14-12nm, 12-10nm and 10nm and below process technologies respectively.
SK hynix focuses on the operating speed of storage products. It is reported that SK Hynix has begun to verify its latest Gen 5 (1b) 10nm server DDR5 DRAM with Intel, which can subsequently be used with Intel Xeon Scalable Platform server processors.
SK Hynix said that its latest DDR5 DRAM speed can reach 6.4Gbps, which is an increase of 33% compared with the 4.8Gbps of the initial DDR5 sample. It also claims that this product is the fastest DDR5 chip on the market. It uses a high-k metal gate on the chip, uses EUV lithography technology, and a 10nm process. Compared with Gen 4 (1a), the power consumption is reduced by 20%. Processing speed increased by 14%.
SK Hynix fifth generation 10nm class (1b) DDR5 DRAM
Kim Jong-hwan, vice president of SK hynix and head of DRAM R&D, said that the memory market situation is expected to improve from the second half of 2023. SK hynix will accelerate the improvement of DRAM competitiveness in the second half of 2023 based on the industry's highest level of DRAM competitiveness such as mass production 1b. Semi-annual performance, and in the first half of 2024, the most advanced 1b process will be expanded to LPDDR5T, high-bandwidth memory HBM3E and other fields.
Samsung, as always, emphasizes R&D and technological leadership, announcing that its 16Gb DDR5 DRAM using 12-nanometer process technology has begun mass production and recently completed compatibility testing with AMD. Samsung said that this product is the industry's most advanced high-performance and low-energy DDR5 DRAM.
It is reported that the technological breakthrough achieved by this product is also achieved by using new high-k materials to increase battery capacitance and patented design technology that improves key circuit characteristics. Combined with advanced multi-layer EUV lithography technology, this product has Samsung's highest DDR5 Die density, which can increase wafer productivity by 20%, power consumption is expected to save about 23%, and supports up to 7.2Gbps operating speed, which means it Can process two 30GB Ultra HD movies in one second. In order to seize the gradually expanding DDR5 market, Samsung plans to start mass production in 2023 and supply customers in fields such as data centers and artificial intelligence.
Among the three storage giants, Micron has taken the lead in the launch of 1bDRAM and has shipped samples to smartphone manufacturers and chipset partners. It will also use new process technology on LPDDR5X memory to provide a maximum rate of 8.5Gbps.
It is understood that Micron’s 1b process is equivalent to the 15nm process technology. Micron claims that the energy efficiency of the new process node has increased by about 15%, the bit density has increased by more than 35%, and each chip provides 16Gb capacity.
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1cDRAM becomes the key to competition in the second half
Although 1b has certain improvements in density, performance, and energy efficiency compared to the 1a process, it still has limitations compared to the next-generation process 1c. Zhang Yi, CEO and chief analyst of iiMedia Consulting, told a reporter from China Electronics News that compared with the 1a process node, the improvement of the 1b process node is mainly reflected in power consumption and performance. 1bDRAM can provide lower power consumption and higher performance, and can also better adapt to the needs of new generation processors. However, compared with 1cDRAM, 1bDRAM still has certain limitations and cannot support higher capacity and faster speed.
Micron’s DRAM technology research and development roadmap
"1cDRAM does have great potential, but in practical applications, cost and technical difficulty, as well as iteration of the technology level, need to be considered," Zhang Yi said.
Therefore, the industry believes that the 1c process is the key to DRAM’s next competition. Yang Jungang, senior integrated circuit analyst at CCID Consulting, believes that 1bDRAM products are mainly affected by the sluggish storage market and the market space is relatively limited. The storage market is expected to rebound at the end of 2023 or the first half of 2024. According to the technology iteration speed of the DRAM market, the market recovery will coincide with the launch of 1cDRAM products, so 1cDRAM products will become the key to competition after the market recovery.
The recent news released by Samsung also supports this view. In order to widen the technology gap with competitors, Samsung has asked its researchers to stop or skip the development of 1bDRAM. The new goal is to complete the development of 11nm sixth-generation 1cDRAM by June this year.
Process nodes of various memory chips
Semiconductor industry expert Zhang Xianyang said that because SK Hynix and Micron have already mass-produced 1bDRAM, Samsung has been hindered in the development of 1bDRAM, which has doubled the pressure on Samsung. Samsung has always advocated being ahead of its rivals in technology. In order to better widen the gap with SK Hynix and Micron, skipping the research and development process will help it stay ahead of its competitors in the next stage.
This is not the first time that Samsung has chosen to skip the research and development process. Previously, Samsung gave up the mass production of 28nm DRAM and focused on the production of 25nm DRAM.
Zhang Yi agreed with Samsung's approach: "1cDRAM has higher competitiveness and better market prospects. 1bDRAM has already been occupied by SK Hynix and Micron. Samsung chose to skip it to avoid direct competition. In the long run "Samsung's decision may be wise, because 1cDRAM is the next generation of mainstream products, but for Samsung, the technology maturity and cost of 1cDRAM will affect customers' decisions."
At present, Samsung, SK Hynix and Micron all have the opportunity to take the lead in the battle for 1cDRAM share. Samsung has always been in a leading position in research and development, SK Hynix has strong production capabilities and technical strength, while Micron has unique technical and design advantages, and product iteration creates product stability. At present, the R&D progress of the three companies is relatively close, and future trends still need to be tested by time and opportunities.
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