Limited Time Replay | Interpretation of Rohm's EcoGaN and LSI Technology (with list of winners)
Limited time playback
On July 31, 2024, the "ROHM's EcoGaN™ & LSI Technology" online seminar was well received by everyone. Thank you again for your enthusiastic participation! Friends who missed this live broadcast can click below to watch the replay.
EcoGaN™
introduce
Nano
introduce
In addition, Roma has selected some representative questions from the seminar to share with you here for your review.
Q
Rohm mainly focuses on GaN products. Apart from the lower voltage resistance than SiC, do it have more advantages in other indicators?
A
The advantages of GaN are mainly in frequency and switching characteristics, such as reduced switching losses.
Q
The video mentions lower driving voltage and very small parasitic parameters. In switching power supply applications, DC brushless motor drive, at high frequency, does the drain-source need to add an RC absorption circuit to suppress overshoot?
A
Overshoot is mainly caused by dv/dt and line parasitic inductance. It is necessary to add RC absorption according to the actual situation.
Q
What kind of components are the GaN technology currently used for? MOS tubes?
A
GaN HEMT is a high electron mobility transistor, which is a switching device similar to MOS, but its structure is different from MOSFET. For details, please visit the ROHM official website
Q
How to solve the problem of gate degradation during GaN processing
A
During the development phase, the gate will be verified for reliability.
Q
How much impact do different semiconductor packaging have on GaN performance?
A
The packaging mainly affects the thermal resistance of the device, i.e. heat dissipation and reliability. Heat dissipation will affect the actual current capability, and reliability aspects such as H3TRB and TC are related to the packaging.
Q
In terms of switching frequency characteristics, 200kHz is more than twice as high as the traditional 100kHz. What advantages can this achieve?
A
The size of inductive components, such as inductors and transformers, can be reduced.
Q
The current and voltage of GaN products are not very high, so ordinary heat dissipation should be sufficient. Will the development of double-sided heat dissipation products lead to the production of higher-power products?
A
GaN packages are very small, and the purpose is to miniaturize them, so the heat sink is also small. Therefore, to achieve higher power, heat dissipation needs to be improved, and double-sided heat dissipation is one of them.
Q
What is the package of Rohm EcoGaN?
A
The DFN package is currently 5mm*6mm.
*EcoGaN™ and Nano Pulse Control™ are trademarks or registered trademarks of ROHM Co., Ltd.
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193****2314
158****9106
180****1078
158****4599
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187****2399
158****9704
184****4331
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185****0350
153****4108
182****7937
193****7780
198****9026
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