PI announces that its SCALE-iDriver for SiC MOSFETs is now AEC-Q100 automotive qualified

Latest update time：2020-03-18

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SAN JOSE, Calif., March 17, 2020 – Power Integrations (Nasdaq: POWI), the leader in gate-driver technology for medium- and high-voltage inverter applications, today announced that its SIC118xKQ SCALE-iDriver™, a high-efficiency single-channel gate driver for silicon carbide (SiC) MOSFETs, is now AEC-Q100 automotive-grade qualified. The new device is designed to support the gate-drive voltage requirements of common SiC MOSFETs and includes advanced safety and protection features.

The SIC1182KQ (1200V) and SIC1181KQ (750V) SCALE-iDriver devices drive SiC MOSFETs in automotive applications with rail-to-rail outputs, fast gate switching speeds, unipolar supply voltages supporting positive and negative output voltages, integrated power and voltage management, and reinforced insulation. Key safety features include drain-source (VDS) monitoring, current sense readout, primary and secondary undervoltage lockout (UVLO), current-limited gate drive, and Advanced Active Clamping (AAC) to ensure safe operation and soft shutdown in fault conditions. AAC, combined with VDS monitoring, ensures safe shutdown time of less than 2µs in short-circuit conditions. Gate drive control and AAC features minimize gate resistance, which helps reduce switching losses and improve inverter efficiency.

The new device combines the control and safety features of SCALE-iDriver with its high-speed FluxLink™ communication technology, which revolutionizes gate driver IC technology compared to the use of optocouplers, capacitive couplers or magnetic couplers. This combination greatly improves isolation capabilities and enables safe, reliable and cost-effective inverter designs below 300kW with minimal external components.

Michael Hornkamp, senior director of marketing for automotive gate-driver products at Power Integrations, said:

Silicon Carbide MOSFET technology opens the door to lighter and smaller automotive inverter systems. Switching speeds and operating frequencies continue to increase; our low gate resistance values are used to maintain high switching efficiency, and our fast short-circuit response protects the system in the event of a fault. In addition, SCALE-iDriver sets a new standard for functional safety in terms of insulation strength; even if the power device causes a catastrophic driver failure, the SCALE-iDriver's insulation remains intact, ensuring that no part of the chassis is exposed to life-threatening high voltages.

The new single-channel SIC118xKQ gate drivers provide up to 8A of output current and are suitable for SiC MOSFETs with standard gate-emitter voltages as low as +15V and negative voltages ranging from -3V to -15V. The new devices have strong immunity to external magnetic fields, use compact eSOP packages, provide ≥9.5mm of creepage and clearance, and use materials that reach the highest CTI level (CTI = 600 according to IEC60112). The new devices are available now.

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