Designing a "charging station" | How to choose solution components? How to choose simulation tools?

ON Semiconductor offers an off-the-shelf PIM series specifically for DCFC with EliteSiC 900V and 1200V breakdown voltage ratings. The modules support half-bridge and full-bridge topologies, are available in F1 and F2 packages, and feature extremely low RDS _ons (3 to 40mΩ, depending on configuration). We can also provide custom modules if the OEM has more specific application requirements.

ON Semiconductor's 1200V EliteSiC module portfolio includes two new M3S-based industrial-grade half-bridge power integrated modules (PIMs) (NXH003P120M3F2PTHG/NXH004P120M3F2PTHG), which feature excellent Rds(on) in standard F2 packages. M3S technology is specially developed for high-speed switching applications and has excellent figures of merit in terms of switching losses, Coss and Eoss. These features help increase system efficiency and power density, allowing designers to choose smaller passive components and reducing system thermal requirements.

For example, in DCFC applications, they can be used at the front end of a three-phase power PFC boost stage and implemented in two- or three-level, unidirectional or bidirectional topologies, allowing designers to achieve excellent performance without expensive Aluminum nitride (AlN) substrate. Lower switching losses and conduction losses as well as reduced junction temperature bring higher efficiency, which in turn makes the product more reliable and has a longer life. In addition, ON Semiconductor is developing a variety of new SiC PIM products using the M3S technology platform to further provide designers with greater flexibility in system design.

Figure 9.1200V EliteSiC M3S MOSFET and module

Certain applications require superior thermal management. To this end, ON Semiconductor offers EliteSiC discrete devices covering a broad portfolio of SiC MOSFETs and SiC diodes. These devices feature a patented termination construction that makes them rugged and durable. This approach reduces the cooling requirements of the system, reduces system complexity, and reduces system weight while extending the life of the device.

NCP51561 is a 5kV/9A isolated high-speed dual-channel MOS/SiC driver with excellent performance that enables higher system-level reliability in harsh operating environments. ON Semiconductor's extensive portfolio of isolated drivers is both robust and integrated with necessary functionality. These drivers support very fast switching transitions to maximize high frequency efficiency. ON Semiconductor also offers single-channel isolated gate drivers that integrate many protection functions, such as the NCD57000\NCD57100.

ON Semiconductor's SiC MOSFET driver technology is flexible and can operate at −5/+18V as well as the more common 0/+15V levels. To simplify design and reduce system cost, OEMs can choose to use 0/+15V, but doing so will reduce efficiency. For higher efficiency and robustness, OEMs want to use −3/+18V. We recommend using −3V/18V for the new third generation M3S EliteSiC MOSFET and EliteSiC power modules to achieve lower conduction loss, Eon loss and Eoff loss.

ON Semiconductor has a rich portfolio of high drive current isolation drivers, allowing OEMs to choose the most appropriate driver based on their application needs. These drives feature a variety of safety features and can adapt to different packaging standards in the industry, enabling efficient integration and flexible design. ON Semiconductor has accumulated extensive experience in the module market and continues to invest in enhancing packaging technology.

We support a wide range of configurations via PIM to enable a modular design approach. While IGBT and hybrid implementations are still in use, SiC-based power modules are quickly becoming the solution of choice for DCFC charging applications. ON Semiconductor also provides the necessary components for OEMs that choose to design their own architecture using discrete components.

We also offer a complete range of power, analog, sensing, protection and connectivity devices for DCFC needs. For example, DC charging piles must support various wired and wireless communication protocols between the charging pile and the vehicle. ON Semiconductor's product portfolio supports major industry core and optional standards. For example, CHAdeMO uses CAN bus, while CCS uses PLC as the bus. OEMs can choose to support other interfaces within the power level (such as RSL485) and external communications (such as Bluetooth BLE, Wi-Fi4/6, LTE, RF).

Figure 10.25kW DCFC modular reference design

(Learn more about ON Semiconductor’s 25kW DCFC modular reference design)

We are one of the few SiC manufacturers with a fully integrated supply chain from wafer to module. Starting with in-house original wafer manufacturing and packaging, ON Semiconductor produces power devices that meet the highest quality standards. In addition, ON Semiconductor is known for its operational excellence and rapid response capabilities.

Figure 11. ON Semiconductor’s complete end-to-end supply chain

ON Semiconductor has a dedicated expert application team that provides SiC driver optimization and system solution expertise for global electric vehicle charging system design. ON Semiconductor offers a wide range of reference designs and hardware that allow customers to quickly evaluate drives and accelerate application development. With these resources, we are ready to help OEMs find the ideal architecture and devices for their applications.

As we stated before, a three-phase power factor correction (PFC) topology (also known as active rectification or active front-end system) is key to efficiently powering a DCFC. The new Elite Power simulation tool enables technological breakthroughs with innovative PLECS models for both hard and soft switching applications such as DC-DC LLC and CLLC resonant, dual active bridges and phase-shifted full bridges, etc. This tool provides an accurate representation of how a circuit will behave using our EliteSiC product line.

Elite Power online simulation tools enable system-level simulation early in the development cycle, providing valuable insights and information for complex power electronics applications. Simulation tools accurately represent circuit conditions when using our EliteSiC product family, including the manufacturing boundary conditions of EliteSiC technology.