Insight into the latest technology trends from ON Semiconductor's several hard-core power products

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End-to-end vertical integration to enhance market competitiveness

ON Semiconductor has a deep historical accumulation in the SiC field and is one of the few large SiC suppliers with end-to-end vertical integration capabilities, including SiC ingot growth, substrates, epitaxy, wafer manufacturing, best-in-class integrated modules and discrete packaging solutions. It is actively accelerating the expansion of SiC substrates and epitaxy, including the recent expansion of factories in Hudson, USA, Rozov, Czech Republic, and Bucheon, South Korea, which will increase production capacity and strive to provide customers with key supply guarantees. At the same time, ON Semiconductor is also actively promoting the upgrade from 6-inch process to 8-inch process.

ON Semiconductor ensures high reliability by vertically integrating the supply chain from raw material powder to finished packaged power devices. This highly scalable end-to-end production method enables ON Semiconductor to control the relevant links of the supply chain, thereby flexibly adjusting production capacity according to market demand and optimizing cost structure.

After acquiring Fairchild Semiconductor, ON Semiconductor's product line has been further optimized to cover the full range of high, medium and low power. After acquiring GT Advanced Technologies (hereinafter referred to as "GTAT"), which has extensive experience in SiC crystal growth, ON Semiconductor has strengthened its strength in the SiC field.

ON Semiconductor's product line is very rich and can cover the bill of materials (Bom) of active devices in most new energy applications, especially high-power power devices.

⭐EliteSiC M3e MOSFET

ON Semiconductor has launched three generations of SiC MOSFET products . The latest generation of EliteSiC M3e MOSFET can reduce the turn-off loss of electrification applications by up to 50% and the conduction loss by 30% , significantly improving the energy efficiency of high-power consumption applications, promoting the development of electric vehicle power systems, DC fast charging piles, solar inverters and energy storage, artificial intelligence data centers and other fields, and helping the global electrification transformation. ON Semiconductor plans to accelerate the launch of multiple new-generation SiC products by 2030.

⭐ Latest generation of silicon and SiC hybrid power integrated modules (PIM) using F5BP packaging

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The FS7 IGBTs offer low turn-off losses, reducing switching losses by up to 8% , while the EliteSiC diodes provide superior switching performance, reducing the on-state voltage drop (VF) by 15% compared to previous generations . These PIMs include an innovative I-type neutral point clamped (INPC) topology inverter module and a flying capacitor topology boost module.

The modules also use an optimized electrical layout and advanced direct bond copper (DBC) substrate to reduce stray inductance and thermal resistance. In addition, the copper substrate further reduces the junction-to-heatsink thermal resistance by 9.3% , ensuring the module stays cool under heavy loads.

⭐7th generation 1200V QDual3 IGBT power module

ON Semiconductor's latest 7th generation 1200V QDual3 IGBT power module can provide 10% higher power than similar products at the same form factor and thermal threshold , making it very suitable for high-power converters such as central inverters for solar power plants, energy storage systems (ESS), commercial agricultural vehicles (CAV) and industrial motor drives. Compared with traditional 600A module solutions, the 800A QDual3 module significantly reduces the number of modules required, greatly simplifies design complexity and reduces system costs.

The QDual3 IGBT module adopts an 800 A half-bridge configuration, integrating the new 7th generation trench field stop IGBT and diode technology, and adopts ON Semiconductor's advanced packaging technology, thereby reducing switching losses and conduction losses. Thanks to FS7 technology, the die size is reduced by 30% , and each module can accommodate more dies, thereby improving power density and achieving a maximum current capacity of 800 A or higher.

The 800 A QDual3 module has an IGBT Vce(sat) as low as 1.75 V (175°C), low Eoff and 10% lower energy losses than the closest alternative . In addition, the QDual3 module also meets the stringent standards required for automotive applications.

⭐T10 PowerTrench® Series and EliteSiC 650V MOSFET

The powerful combination of ON Semiconductor's latest generation T10 PowerTrench® series and EliteSiC 650V MOSFET provides a complete solution for data center applications, which can achieve significant energy savings and reduce power consumption by up to 10 terawatts. If this solution is implemented in data centers around the world, it can reduce energy consumption by about 10 terawatt hours per year , which is equivalent to providing annual electricity consumption for nearly one million households. The combined solution also meets the stringent Open Rack V3 (ORV3) base specification required by hyperscale operators and supports the next generation of high-power processors.

EliteSiC 650V MOSFETs provide superior switching performance and lower device capacitance, enabling higher efficiency in data centers and energy storage systems. Compared to the previous generation of SIC MOS products, ON Semiconductor's latest generation of SIC MOSFETs can halve Qg and reduce the energy _EOSS and charge QOSS _stored on the output capacitor by 44% .

Compared to superjunction (SJ) MOSFETs, they have no tail current when turned off, perform better at high temperatures, and significantly reduce switching losses. This enables customers to increase operating frequency while reducing the size of system components, thereby reducing overall system costs.

Designed to handle the high currents critical to DC-DC power conversion stages, the T10 PowerTrench series offers higher power density and superior thermal performance in a compact package size. This is achieved through a shielded gate trench design that features ultra-low gate charge and an on-resistance R _DS(on) of less than 1 milliohm . In addition, the soft recovery body diode and lower Qrr effectively reduce ringing, overshoot and electrical noise, ensuring optimal performance, reliability and robustness under stress. The T10 PowerTrench series also meets the stringent standards required for automotive applications.

In addition, ON Semiconductor provides comprehensive ecosystem support, including SiC devices in various packages and related gate drivers, evaluation boards/kits, reference designs, selection guides, application manuals, SPICE models and simulation tools, etc., to help designers speed up and simplify their designs.

ON Semiconductor has also reached strategic cooperation with many industry-leading companies such as BMW Group, Volkswagen, Hyundai-Kia, BMW, Zeekr, Vitesco Technologies, Inovance, Sineng Electric, and Growatt, accelerating innovation through efficient communication and cooperation.

Welcome to scan the QR code below to vote for ON Semiconductor. Find ON Semiconductor in the International Power Device Industry Excellence Award, Power Device-SiC Industry Excellence Award categories to vote.

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