Core News Express | Infineon launches new HYPERRAM™ memory chip that doubles the bandwidth of high-performance low-pin-count solutions
Infineon Technologies has introduced a new HYPERRAM™ 3.0 device to further improve its high-bandwidth, low-pin-count memory solutions. The device features a new 16-bit extended HyperBus™ interface that doubles the throughput to 800MBps. With the introduction of the HYPERRAM™ 3.0 device, Infineon offers a complete portfolio of low-pin-count, low-power, high-bandwidth memories. The chip is ideal for applications that require extended RAM memory , including video buffering, factory automation, artificial intelligence Internet of Things (AIoT) and automotive vehicle-to-everything (V2X), as well as applications that require scratch pad memory for data-intensive computing.
New HYPERRAM™ 3.0 memory chip
Ramesh Chettuvetty, Senior Marketing and Application Director of Infineon Technologies’ Automotive Electronics Division, said: “Infineon has nearly three decades of deep expertise in memory solutions, and we are very pleased to bring another industry-first product to the market. The data throughput per pin of the new HYPERRAM™ 3.0 memory solution is much higher than existing technologies on the market such as PSRAM and SDR DRAM. Its low power consumption characteristics can achieve lower power consumption without sacrificing throughput. , making this memory ideal for industrial and IoT solutions. ”
Infineon HYPERRAM™ is a stand-alone volatile memory based on PSRAM that provides a cost-effective and practical way to add memory expansion. Its data rate is comparable to SDR DRAM, but it uses fewer pins and consumes less power. The HyperBus™ interface's higher data throughput per pin enables the use of lower pin count microcontrollers (MCUs) and lower layer count PCBs, providing lower complexity and more cost-optimized solutions for target applications. design plan.
About HYPERRAM™
Infineon Technologies launched the first generation of HYPERRAM™ devices supporting the HyperBus™ interface in 2017. The second generation of HYPERRAM™ devices was launched in 2021, supporting both OctalxSPI and HyperBus™ JEDEC-compatible interfaces, with a maximum data rate of 400 MBps. The third generation of HYPERRAM™ devices supports the new extended HyperBus™ interface, achieving a data rate of 800 MBps. HYPERRAM™ devices range in density from 64 Mb to 512 Mb, are AEC-Q100 qualified and support industrial and automotive temperature grades up to 125°C.
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