Recently, an investor asked a question on the investor interaction platform: How about the company's WIFI6 chip technology?
In response to this, Fumanwei stated on the investor interaction platform that the company's WiFi6 R&D team is the earliest domestic team to engage in gallium arsenide WiFi RF front-end design. They have profound industry experience and have currently shipped WiFi6 switch chips in batches.
According to the author's understanding, Fumanwei's entry into the RF front-end track from power IC is mainly through the technical support of Hangzhou Lingxin Microelectronics Co., Ltd. (hereinafter referred to as "Lingxin Microelectronics").
On September 28 last year, Fumanwei and Hangzhou Lingxin Microelectronics signed the "Cooperative Investment and Operation 5G Project Agreement" in Shenzhen, and jointly invested RMB 30 million to establish Shanghai Yingsi Microelectronics Co., Ltd. Among them, Fumanwei invested RMB 21 million, accounting for 70% of the registered capital; Lingxin Microelectronics invested RMB 9 million in intellectual property rights, accounting for 30% of the registered capital. The project company is mainly committed to the design and development of 5G RF series chip products. The RF front-end chip is the core component of the RF chip, including power amplifier (PA), low noise amplifier (LNA), antenna switch (Switch), filter (Filter), duplexer (Duplexer and Diplexer), etc.
However, according to Tianyancha, Lingxin Microelectronics was only established in 2018 and is still small. Fumanwei's claim that the company's WiFi6 R&D team is the first in China to engage in gallium arsenide WiFi RF front-end design may be questionable.
Liu Jingyu, chairman of Fuman Electronics, once said that regarding the planning of 5G RF chips, our 5G series RF front-end chips can be used in mobile phones. We have contacted companies such as Xiaomi and Transsion. Our 5G RF chip products are benchmarked against Zhuoshengwei's high-end RF product line.
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