Saiwei Electronics: Has already laid out gallium nitride (GaN) epitaxial materials and devices

Publisher:CelestialGardenLatest update time:2021-06-17 Source: 爱集微 Reading articles on mobile phones Scan QR code
Read articles on your mobile phone anytime, anywhere

Recently, Saiwei Semiconductor stated on the investor interaction platform that the company is the world's leading MEMS pure-play foundry. Its foundry products include various MEMS chips and basic structural modules such as flow, infrared, acceleration, pressure, inertia, micromirrors, optical switches, silicon microphones, etc.; at the same time, it has deployed gallium nitride (GaN) epitaxial materials and devices to meet the Internet of Things' demand for related devices with its own products.

It is understood that in terms of GaN epitaxial wafers, Saiwei Semiconductor has built a 6-8 inch GaN epitaxial material manufacturing project (Phase I) with an annual production capacity of 10,000 wafers. Currently, it has signed sales contracts worth tens of millions of yuan and arranged production and delivery according to commercial terms. In terms of GaN device design, production capacity is mainly limited by the production capacity of the supplier manufacturer. Currently, there is no problem in terms of technology, application and demand. The key is that the supply of production capacity is limited. In this regard, Saiwei Semiconductor has signed batch tape-out contracts to try to alleviate the problem of production capacity bottleneck.

On the other hand, Saiwei Semiconductor's GaN business subsidiary, Juneng Chuangxin, invested in the establishment of Qingzhou Juneng International Semiconductor Manufacturing Co., Ltd., with the goal of completing the construction of a GaN production line within 2021 and preparing for production, so as to promote capacity construction as soon as possible, improve the IDM layout, and further form independent, controllable, fully localized, and sustainably expandable GaN materials, design and manufacturing capabilities.

In terms of MENS, Saiwei Electronics' Beijing 8-inch MEMS international foundry line (Beijing FAB3) started mass production on June 10. It is understood that the first chip in mass production is a MEMS microphone chip from General Micro Technology Co., Ltd. (GMEMS). This type of chip has high signal-to-noise ratio and high AOP characteristics, which are consistent with the performance of the same type of chip manufactured by FAB in Sweden; the MEMS microphone packaged based on this chip has excellent performance, which is comparable to similar products of internationally renowned sensor companies such as Knowles Electronics and Infineon. After strict wafer-level performance testing by General Micro Technology and performance testing and reliability verification of MEMS microphones, it is confirmed that the performance of the finished product meets the design index requirements and is consistent with the key performance of MEMS microphones packaged based on chips manufactured by FAB in Sweden. At the same time, the yield of the first batch of wafers manufactured by FAB3 is at the same level as FAB1&2 in Sweden, and mass commercial production has begun.

The mass production of Beijing FAB3 has enabled Saiwei Semiconductor to have industry-leading, high-quality 8-inch MEMS production lines in both Stockholm, Sweden and Beijing, China. At the same time, Beijing FAB3 can provide standardized large-scale production capacity. Saiwei Semiconductor said that it will help the company further expand its global market, especially the Asian market, and combine advanced technology with large-scale production capacity to better serve downstream customers. At the same time, it will continue to expand the company's competitive advantage in MEMS business and continue to maintain its global leading position in the MEMS pure foundry field.

Public data shows that the total capacity of the Beijing MEMS production line of Saiwei Electronics is 30,000 pieces/month. The first phase of the production capacity of 10,000 pieces/month has been completed. Internal debugging will be carried out in Q4 2020, and wafer verification will begin in Q1 this year. It is expected to achieve formal production in the second quarter. It is expected to achieve 50% of the capacity in the second half of this year, that is, 5,000 wafers per month, and 100% of the capacity of the first phase in 2022, that is, 10,000 wafers per month; 15,000 wafers per month in 2023, 20,000 wafers per month in 2024, 25,000 wafers per month in 2025, and 30,000 wafers per month in 2026. As the manufacturing level of the Beijing production line gradually matures, if the growth of orders and customer demand exceeds expectations, the above-mentioned capacity ramp-up progress from 2022 may be accelerated.


Reference address:Saiwei Electronics: Has already laid out gallium nitride (GaN) epitaxial materials and devices

Previous article:Huawei applies for patent for "wireless charging glasses": N coils on the temples
Next article:Samsung Watch 4 watch appearance database: supports 5W wireless charging

Latest Mobile phone portable Articles
Change More Related Popular Components

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

About Us Customer Service Contact Information Datasheet Sitemap LatestNews


Room 1530, 15th Floor, Building B, No.18 Zhongguancun Street, Haidian District, Beijing, Postal Code: 100190 China Telephone: 008610 8235 0740

Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号