RF amplifiers with Zero Distortion™ technology provide better performance than RF semiconductors such as GaAs technology.-EEWORLD

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IDT's RF amplifier product line offers different gain, noise and linearity characteristics under differential or single-ended input impedance conditions. Compared with simple gain amplifier modules, this product uses Zero Distortion™ technology to achieve a larger third-order intercept point (IP3) with very low current consumption. In addition, the RF amplifier has multiple input and output ports, and its built-in broadband balun supports broadband applications. To ensure reliable operation of the device, the product's SiGe amplifier module uses a passive integrated device (IPD) and adopts a high-capacity QFN package. Figure 1 shows a system block diagram using the F0424 broadband amplifier below 6GHz.

Figure 1 System block diagram using F0424 broadband amplifier below 6GHz

IDT RF amplifiers use cutting-edge RF semiconductor technologies such as GaAs technology to ensure that the product has more advantages. Compared with other products on the market, this RF amplifier is immune to higher electrostatic discharge (ESD) and belongs to the MSL1 sensitivity level, making its manufacturing more stable. And its small leakage current at low temperatures ensures higher reliability. At the same time, the product has a high level of integration to reduce costs.

Here we will introduce the core technology of the product - Zero Distortion™ technology. IDT devices improve the signal-to-noise ratio by reducing ground noise and IM3 intermodulation distortion, as shown by the yellow curve in Figure 2. This method is very effective in limited spectrum environments. It not only improves the quality of service, but also releases underutilized spectrum, making communications more stable.