NXP uses GaN in 5G multi-chip modules to enable energy-efficient mobile networks

NXP uses GaN in 5G multi-chip modules to enable energy-efficient mobile networks

• GaN performance in NXP multi-chip modules for 5G infrastructure improves efficiency by 8 percentage points

• Reduce the size and weight of base station radio units; accelerate the design and deployment of 5G systems

• NXP combines multiple technologies to achieve optimal performance

Eindhoven, the Netherlands - July 5, 2021 - NXP Semiconductors NV announced the integration of gallium nitride (GaN) technology into its multi-chip module platform, an important industry milestone in 5G energy efficiency. NXP's GaN wafer fab in Arizona is the most advanced wafer fab in the United States dedicated to the production of RF power amplifiers. Based on the company's significant investment in the fab, NXP is the first to launch 5G massive MIMO RF solutions. The solution combines the high efficiency of GaN with the compactness of multi-chip modules.

Reducing energy consumption is a major goal for telecommunications infrastructure, where every bit of efficiency counts. Using GaN in multi-chip modules increases the portfolio efficiency to 52% at 2.6 GHz, 8 percentage points higher than the company’s previous generation modules. NXP has further improved performance by using a patented combination of LDMOS and GaN technologies in a single device, delivering 400 MHz of instantaneous bandwidth, enabling wideband RF designs with just one power amplifier.

NXP's small-footprint 5G multi-chip modules now achieve this energy efficiency and broadband performance. The new portfolio will help RF developers reduce the size and weight of base station RF units, helping mobile network operators reduce the cost of deploying 5G on cell towers and rooftops. In a single package, the module integrates a multi-stage transmit chain, a 50-ohm input/output matching network, and a Doherty design, and NXP has now added bias control using its latest SiGe technology. This new integration step eliminates the need for a separate analog control IC to provide closer monitoring and optimization of power amplifier performance.

“NXP has developed a unique technology toolbox specifically for 5G infrastructure, including proprietary LDMOS, GaN and SiGe, as well as advanced packaging and RF design IP,” said Paul Hart, executive vice president and general manager of NXP’s Radio Power business unit. “This allows us to leverage the strengths of each component and combine them in the best way for each use case.”

The new devices are pin-compatible with previous generation modules, allowing RF engineers to scale a single power amplifier design across multiple frequency bands and power levels, reducing design cycle time and accelerating the global rollout of 5G.

Availability

NXP's new 5G multi-chip modules will be available for sampling in the third quarter and will begin volume production later this year. NXP will launch the RapidRF series of RF analog front-end (reference) designs based on these products to help accelerate the design of 5G systems.

NXP’s 5G Access Edge Technology Portfolio

From antennas to processors, NXP offers a strong portfolio of technology products to accelerate 5G deployment, providing best-in-class performance and security for infrastructure, industrial and automotive applications. These include NXP's Airfast RF power solution family and Layerscape family of multi-core processors for wireless data links, fixed wireless access and small base station equipment.