3 SiC collaborations! Geely Auto announces new achievements

Recently, "Experts Talk about Three and a Half Generations" has discovered three new silicon carbide cooperation cases in the industry:

On November 12, Jingneng Microelectronics revealed on its official Weibo that the unveiling ceremony of the "Geely Automobile Power Semiconductor Technology Innovation Platform" jointly organized by the New Energy Development Center of the Geely Automobile Group Central Research Institute and other departments and institutions was successfully held. Jingneng Microelectronics, as a partner, released the first batch of results.

According to the person in charge of the platform, the first phase of the platform's achievements is the Taiyi hybrid power device, which is a platform solution jointly developed by the platform's first phase partners, including Lattice Energy and STMicroelectronics. It adopts SiC&IGBT parallel design, with a peak power that can be expanded to 150-260KW. The ultimate system size is only the size of an A4 paper, and the current output capacity exceeds 430A.

It is worth noting that the platform brings together power semiconductor companies such as STMicroelectronics, Silan Microelectronics, CRRC Times, and Jingneng Microelectronics, and cooperates with the scientific research university Fudan University Ningbo Research Institute to empower industrialization. In the future, it will carry out power semiconductor and high-end chip technology innovation and development and application around new energy, small three electric vehicles, and hybrid vehicles.

With the help of this platform, Geely Auto will deeply integrate the technological advantages and resources of various semiconductor companies, component companies, universities, research institutes, etc., and accelerate the research and development and application of third-generation wide-bandgap semiconductors, high-end MCUs, and analog and digital chips in the automotive field.

On November 11, Xinta Electronics revealed on its official Weibo that Zhejiang Xinta Electronic Technology Co., Ltd. has become a joint venture between Anhui Xinta Electronics and a subsidiary of Jewatt Microelectronics Co., Ltd., and its main business is the supply of silicon carbide power modules and their solutions.

Xinta Electronics said that Anhui Xinta and Jewatt will take this cooperation as an opportunity to rely on the silicon carbide power module packaging production line in Huzhou, Zhejiang, and combine their own chip research and development advantages to continuously develop automotive-grade silicon carbide power modules with higher performance and high reliability. This cooperation will further promote the deep-level industrial collaboration between the two parties in multiple fields. The two parties will give full play to their respective advantages in market expansion, application development, technological innovation, resource integration, etc., and achieve strong alliance and win-win development.

According to information, JWATE was established in March 2013 and is an analog integrated circuit design company with virtual IDM as its main business model. At present, its products cover multiple series such as DC/DC, AC/DC, linear power supply, battery management and signal chain, and its application fields include automotive electronics, computing and communications, industry, new energy and consumer electronics, etc. There are more than 2,000 chips on sale and more than 600 chips under research.

“Insiders Talk About Three and a Half Generations” discovered that Yixin Technology, a subsidiary of Jewatt, also invested in another silicon carbide company – Tianyi Jingneng.

According to "Qinghe Capital Investment Research Online", Chengdu Tianyi Jingneng Semiconductor Co., Ltd. was established in 2022 and is committed to the industrialization of liquid phase silicon carbide crystal growth technology. It has core technologies for silicon carbide single crystal growth with completely independent intellectual property rights, covering equipment design, thermal field design, crystal growth process and other processes. It has independently developed silicon carbide substrate preparation technology of different sizes and completed its A round of financing in March 2024.

On November 11, Xinneng Semiconductor announced on its official Weibo that they had signed a strategic cooperation agreement with Xinhe Semiconductor and would jointly establish the "Silicon Carbide Power Module Joint Laboratory."

In the future, this cooperation will rely on the advantages of Xinhe Semiconductor's silicon carbide MOS chip design, wafer manufacturing capabilities, etc., and complement the advantages of Xinneng Semiconductor in customer base, power module packaging, product application, etc. Through resource sharing, technical exchanges and other means, the two parties will jointly carry out the research and development, production and application of silicon carbide power modules, and jointly improve the performance and reliability of silicon carbide power modules.

It is reported that Xinneng Semiconductor has released the country's first intelligent power module based on silicon carbide MOS, and has started mass production on the client side. In addition, the high-power module packaging factory invested and built in Hefei has officially been put into operation, serving more than 1,500 end customers.

Xinhe Semiconductor focuses on silicon carbide chip design, wafer manufacturing, wafer testing, silicon carbide power devices, etc. Its Beijing-based 6-inch silicon carbide wafer factory with an annual output of 30,000 pieces has been shipping in batches, and an 8-inch silicon carbide product verification platform is under planning and construction.