BluGlass reduces impurities in GaN film growth using RPCVD technology

BluGlass of Australia claims to be able to produce ideal purity gallium nitride (GaN) using their low-temperature remote plasma chemical vapor deposition (RPCVD) technology. The company says their RPCVD technology can produce GaN with low levels of carbon, hydrogen and oxygen impurities, and its impurity levels are comparable to those of GaN layers deposited by metal organic vapor phase deposition.

　　Evans Analytical Group, a well-known and independent materials characterization company, used secondary ion spectroscopy to demonstrate that BluGlass' technology can control carbon, hydrogen and oxygen impurity levels to less than 1*1017 atoms per cubic centimeter.

　　BluGlass now plans to optimize the p-GaN layer and introduce the advantages of RPCVD to customers, including the improved LED device efficiency achieved by the technology compared to conventional MOCVD.

　　Giles Bourne, CEO of BluGlass, said: “This achievement is a breakthrough for our company and a key step in demonstrating the strength of our technology to the industry and future customers. Carbon and oxygen are well known inhibitors of RPCVD technology, so the reduction of these two impurities is a significant discovery.”