Major breakthrough in photoresist materials: Extreme ultraviolet lithography moves towards practical use

Intel has been using micro exposure equipment (MET) to test and evaluate various materials in order to find a photoresist material that can simultaneously meet the requirements of high sensitivity, high resolution, and low line width roughness (LWR). Recently, a major breakthrough has finally been made.

At the lithography conference held by the International Society for Optical Engineering (SPIE), Intel demonstrated this by using a positive chemically amplified photoresist (CAR) combined with an extreme ultraviolet bottom layer and a corresponding rinse agent to ultimately achieve a 22nm half pitch resolution and meet sensitivity and LWR requirements.

Intel proudly announced that after decades of unremitting efforts, extreme ultraviolet lithography technology has moved from the research level to practical use. Of course, it will still take some time before it can be truly commercialized.

The blue part represents the photoresist