SK Hynix's confidence: "Our HBM is stronger than our competitors"

SK hynix expressed confidence in its high-bandwidth memory (HBM) manufacturing technology. The company stressed that its proprietary HBM is much more powerful than competitors' products, which will enable it to maintain its leading position in the next-generation semiconductor packaging field.

According to industry sources on June 9, SK hynix presented this information at the "ECTC 2024" seminar held in Denver, the United States on May 28.

SK hynix claims that the HBM made using the company’s unique Mass Reflow-Molding Underfill (MR-MUF) technology is 60% stronger than products made using Thermo Compression-Non-Conductive Film (TC-NCF).

SK hynix conducted a test using a sharp tool to pierce the top of the DRAM mounted with HBM to create scratches, and found that its chips had fewer scratches than chips produced using TC-NCF. This result shows that HBM can withstand external physical shocks without affecting the yield rate in the heterogeneous integration packaging process involving the combination of HBM and computing units.

The industry believes that SK hynix's paper is an attempt to highlight the superiority of its HBM manufacturing technology over competitors such as Samsung Electronics and Micron Technology. SK hynix is ​​a leading HBM supplier to major AI semiconductor companies such as NVIDIA, and is at the forefront of advanced semiconductor packaging in collaboration with TSMC, and these achievements are expected to attract its major customers.

SK hynix also demonstrated the development of its next-generation packaging technology "Vertical Fan-Out (VFO)" at ECTC. This technology vertically stacks four LPDDR memories on top of a computing unit without a semiconductor substrate, called Fan-Out Wafer-Level Packaging (FOWLP).