[July 10, 2024, Shanghai, China] From July 8 to 10, Infineon, a global semiconductor leader in power systems and the Internet of Things, will present a wide range of power and power semiconductor products at the "2024 Munich Shanghai Electronics Show" . With the theme of "Low-carbonization and digitalization drive sustainable development", Infineon's deep accumulation in the field of green, low-carbon and sustainable technologies, as well as innovative solutions in application markets such as green energy and industry, smart homes, and electric vehicles, will be fully demonstrated. During the exhibition, the "2024 Infineon Wide Bandgap Forum" was held for the first time, focusing on the latest development results of new materials and new applications of third-generation semiconductors, and discussing the application and development of wide bandgap fields with industry partners, and jointly promoting the development of low-carbonization and digitalization.
With the booming development of the new energy multi-application market, the third-generation semiconductor technology is increasingly supporting new quality productivity. Wide bandgap semiconductors represented by silicon carbide and gallium nitride have become an important driving force for the development of the green energy industry, helping to achieve higher efficiency, smaller size, lighter weight, and lower total cost. As a global semiconductor leader in the field of power systems, Infineon continues to deploy in the field of third-generation semiconductors such as silicon carbide (SiC) and gallium nitride (GaN). Through technological innovation, capacity expansion and market application expansion, it provides high-performance power semiconductor solutions for key industries under the low-carbon trend such as photovoltaic storage, smart home, and new energy vehicles, promoting the industry's green transformation and sustainable development.
David Pan, Senior Vice President and President of Infineon Technologies Greater China, and Head of Infineon Technologies Consumer, Computing and Communications Business Greater China
In the opening speech of the main forum on the morning of the 9th, David Pan, Global Senior Vice President and President of Greater China of Infineon Technologies, and Head of Greater China of Infineon Technologies Consumer, Computing and Communications Business, said: "Semiconductor solutions are the key to achieving climate goals. Wide bandgap semiconductors can significantly improve energy efficiency and promote low-carbon transformation. Under the current background of green and low-carbonization, wide bandgap semiconductors represented by silicon carbide and gallium nitride have begun to be widely used in new energy, electric vehicles, energy storage, fast charging and other fields as new materials and new technologies. As an industry leader, Infineon plays a leading role in the field of wide bandgap semiconductors with its continuous technological innovation and market layout, and is committed to meeting the needs of economic and social development for more energy-efficient and environmentally friendly semiconductor products."
In the keynote speech "Wide Bandgap Innovation Technology Accelerates Low Carbonization and Digitalization", Liu Wei, Vice President of Infineon Technologies and Head of Greater China Marketing for Infineon Technologies' Consumer, Computing and Communications Business, and Shen Lu, Vice President of Infineon Technologies and Head of Greater China Marketing for Infineon Technologies' Industrial and Infrastructure Business, respectively elaborated on Infineon's leading advantages in the field of gallium nitride (GaN) and silicon carbide (SiC) wide bandgap semiconductors from a market perspective. Based on its rich accumulation in the field of SiC, Infineon has more than 40 years of understanding of SiC process, packaging and failure mechanism, the world's largest 8-inch silicon carbide power wafer factory, and the industry's most extensive SiC product portfolio, application market, and customer base coverage. In particular, the new generation of CoolSiCTM MOSFET Gen2 technology has increased the main performance indicators of MOSFET (such as energy and charge storage) by 20% compared with the previous generation of products, significantly improving overall energy efficiency. In terms of GaN, since the acquisition of GaN Systems was completed in October last year, Infineon's GaN product portfolio currently includes high-voltage and medium-voltage BDS, sensing, drive and control series, which can be widely used in AI servers, on-board chargers (OBC), photovoltaics, motor control, chargers and adapters, etc. For example, in the field of AI servers, the use of semiconductors has been further increased based on the demand for higher power in AI systems.
In terms of technology market, Chen Zhihao, Vice President of Infineon Technologies and Head of Technology Market for Greater China for Consumer, Computing and Communications Business of Infineon Technologies, and Chen Lifeng, Senior Technology Director of Infineon Technologies and Head of Technology Market for Greater China for Industrial and Infrastructure Business of Infineon Technologies, introduced how Infineon's wide bandgap products can help improve energy efficiency from the perspective of technology application. For example, the technical characteristics of three semiconductor material devices, Si, SiC and GaN, were compared, pointing out that although silicon super junctions are dominant in low switching frequencies, SiC and GaN will eventually dominate new topologies and high-frequency applications; combining the technical characteristics and advantages of CoolSiC™ and CoolGaN™, typical application cases in different fields, such as the use of SiC modules in public power conversion (PCS) systems to achieve >99% efficiency, and the application of CoolGaN™ bidirectional switches in micro inverters.
In addition, Qiu Baishun, senior analyst of compound semiconductors at Yole Group, shared with the participants the latest development trends and prospects of the global silicon carbide and gallium nitride markets from the perspective of industry analysis. Peng Han, professor and doctoral supervisor at Huazhong University of Science and Technology, comprehensively introduced the application opportunities and challenges of wide bandgap power devices.
At the Silicon Carbide (SiC) and Gallium Nitride (GaN) sub-forum held on the afternoon of the 9th, nearly 20 guests from Infineon and the industry presented two wonderful wide bandgap semiconductor knowledge feasts to the participants from multiple dimensions such as market trends, application solutions, and technological innovation. In terms of market trends, the rapid growth of demand for wide bandgap semiconductors in key areas such as new energy vehicles, photovoltaics, energy storage, and server power supplies was deeply analyzed. At the same time, with the continuous maturity of technology and the gradual reduction of costs, wide bandgap semiconductors will usher in a broader development space.
Infineon booth
Green Energy and Industry
Power semiconductors play a prominent role in reducing energy consumption and improving energy conversion efficiency, and are a powerful tool for achieving the dual carbon goals. As a global leader in the power semiconductor market, Infineon provides leading semiconductor solutions with high energy efficiency and high power density, covering the entire power industry chain from power generation to transmission and distribution to energy storage and power consumption, injecting green momentum into the development of the industry.
In the Green Energy and Industry exhibition area, Infineon's highlight products and solutions include the four-way 2000V 60A MPPT EasyPACK™ CoolSiC™ MOSFET 3B silicon carbide module for photovoltaic power generation, which can simplify system design while improving power density and reducing overall costs; there is also the photovoltaic string inverter EasyPACKTM module, which is composed of 950V IGBT7 and 1200V SiC diode, which can effectively reduce the switching loss of IGBT; there is also a 62mm package 2000V CoolSiCTM half-bridge module developed specifically to meet the needs of centralized solar inverters, industrial motor drives and uninterruptible power supplies (UPS). In addition, the industry-leading 2kV CoolSiCTM single tube and Infineon's second-generation CoolSiCTM single tube are on display.
Smart Home
In the smart home exhibition area, Infineon's "Rocket Ship Lander" demonstrated the high-performance computing capabilities of Infineon's PSOC™ Edge MCU to the audience with interesting interactive games. On a 10-inch display, players control the descending rocket through gestures to keep it away from obstacles and land safely, combining Cortex®-M55 with Helium DSP to solve computing needs and challenging game logic, and Ethos™-U55 CPU to effectively execute machine learning models. Gesture recognition is performed by Infineon's XENSIV™ sensor (BGT60TR13C) and combined with advanced HMI functions to achieve rich visual elements and game graphics.
In the field of power supply, Infineon's latest medium-voltage CoolGaN™ device launched in June also made a strong debut, and a 2KW motor drive solution based on Infineon's medium-voltage gallium nitride was also exhibited. In addition, the 240W USB-PD adapter 1C exhibit uses the digital control XDPS2222 Combo IC CrM PFC + hybrid flyback HFB + GaN, demonstrating Infineon's high-power, single-port digital power solution.
In addition to components, Infineon also demonstrated its excellent one-stop solution capabilities through the "Smart Induction Cooker Reference Design". This reference design covers the full set of solutions required to build a high-end induction cooker, including advanced microcontrollers, IGBTs, gate drivers, current sensors, CAPSENSE™ HMI, microphones, and wireless connectivity components, effectively accelerating the development process. This full-featured starter kit can help customers' induction cooker solutions maintain industry leadership in the next few years with its advanced functions.
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