Infineon launches CoolSiC™ Schottky diode 2000 V,
DC bus voltage up to 1500 VDC, higher efficiency and simpler design
[Munich, Germany, October 23, 2024]
Today, many industrial applications can transition to higher power levels while striving for minimum power losses by increasing the DC bus voltage
. To meet this demand, Infineon Technologies AG (FSE code: IFX / OTCQX code: IFNNY), a global semiconductor leader in power systems and the Internet of Things, has launched the CoolSiC™ Schottky diode 2000 V G5, the first discrete silicon carbide diode on the market with a breakdown voltage of 2000 V. This product series is suitable for applications with DC link voltages up to 1500 VDC and rated currents from 10 A to 80 A, making it a perfect choice for high DC bus voltage applications such as photovoltaics and electric vehicle charging.
CoolSiC™ Schottky diode 2000 V G5 in TO247-4 package
该产品系列采用TO-247PLUS-4-HCC封装，爬电距离为14 mm，间隙距离为5.4 mm，再加上高达80 A的额定电流，显著提升了功率密度。 它使开发人员能够在应用中实现更高的功率水平，而元件数量仅为 1200 V SiC解决方案的一半。这简化了整体设计，实现了从多电平拓扑结构到2电平拓扑结构的平稳过渡。
In addition, the CoolSiC™ Schottky diode 2000V G5 uses .XT interconnect technology, which greatly reduces thermal resistance and impedance, achieving better thermal management. In addition, the HV-H3TRB reliability test also proves the diode's tolerance to humidity. The diode has no reverse or forward recovery current and has a low forward voltage, ensuring better system performance.
The 2000 V diode family is perfectly matched to Infineon’s CoolSiC™ MOSFET 2000 V in TO-247Plus-4 HCC package, which will be launched in spring 2024. The CoolSiC™ diode 2000 V portfolio will be expanded by offering a TO-247-2 package, which will be launched in December 2024. In addition, Infineon offers a gate driver portfolio that matches the CoolSiC™ MOSFET 2000 V.
Availability
The CoolSiC™ Schottky diode 2000 V G5 series in TO-247PLUS-4 HCC package and its evaluation board are available now.
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