Nexperia launches new 120 V/4 A half-bridge gate driver to further improve robustness and efficiency in industrial and automotive applications

Improving power converter efficiency and motor control stability

Nijmegen, November 20, 2024: Nexperia today announced a range of high-performance gate driver ICs that can be used to drive high-side and low-side N-channel MOSFETs in synchronous buck or half-bridge configurations. These drivers include automotive and industrial versions, with high current output and excellent dynamic performance, which can greatly improve application efficiency and robustness. Among them, the NGD4300-Q100 meets automotive standards and is very suitable for electric power steering and power converter applications; the NGD4300 is designed for DC-DC converters in consumer devices, servers and telecommunications equipment, as well as micro inverters in various industrial applications.

这些IC中的高边驱动器可以在不超过120 V的直流总线电压下工作，其中集成了二极管的自举电源有助于缩小PCB尺寸，简化整体系统设计。此系列器件可提供高达4 A（峰值）的拉电流和5 A的灌电流，即使在重负载下也能确保上升和下降时间较短。其延迟特性还显著优于类似竞品，输入输出延迟低至13纳秒，通道间延迟误差仅1纳秒，有助于进一步提高开关占空比，从而缩短死区时间。这些栅极驱动器的上升时间为4纳秒，下降时间为3.5纳秒（典型值），可促进提高效率，支持高频和快速系统控制。除此之外还能兼容输入控制信号，可接受TTL和CMOS两种逻辑电平。

“These devices are the first in our new portfolio of high-performance half-bridge gate drivers,” said Irene Deng, General Manager of Nexperia’s IC Solutions business unit . “This launch highlights how Nexperia is using process innovation to address the growing market demand for robust gate drivers, while increasing power converter efficiency and enhancing motor control stability in consumer, industrial and automotive applications.”

These ICs use a silicon-on-insulator (SOI) process to extend the negative voltage tolerance of the HS pin to -5 V, significantly reducing the risk of chip damage caused by system parasitic components and unexpected spikes, thereby ensuring excellent robustness in power conversion and motor drive applications. The NGD4300 and NGD4300-Q100 are available in three package options: DFN-8, SO-8, and HSO-8, allowing engineers to flexibly choose between device size and thermal performance based on application requirements.