Infineon launches CoolSiC MOSFET 400 V, redefining power density and efficiency of AI server power supplies

Munich, Germany, June 25, 2024 - As artificial intelligence (AI) processors become increasingly power-hungry, server power supplies (PSUs) must deliver more power without exceeding the size of server racks, primarily because of the surge in energy requirements of advanced GPUs. By the end of this decade, each advanced GPU chip could consume 2 kW or more. These demands, as well as the emergence of more demanding applications and related specific customer requirements, have prompted Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) to develop SiC MOSFET products for voltages below 650 V. Now, Infineon is launching a new CoolSiC™ MOSFET 400 V family based on the second generation (G2) CoolSiCTM technology released earlier this year. The new MOSFET portfolio was developed specifically for the AC/DC stage of AI servers and complements Infineon's recently announced PSU roadmap. The devices are also suitable for solar and energy storage systems (ESS), variable frequency motor control, industrial and auxiliary power supplies (SMPS) and solid-state circuit breakers for residential buildings.

CoolSiC™ MOSFET 400 V TO-Leadless

“Infineon offers a broad portfolio of high-performance MOSFETs and GaN transistors that meet the demanding design and space requirements of AI server power supplies,” said Richard Kuncic, Head of the Power Systems Business Line at Infineon Technologies . “We are committed to supporting our customers with leading-edge products such as the CoolSiC™ MOSFET 400 V G2 to achieve the highest energy efficiency in advanced AI applications.”

The new series features ultra-low conduction and switching losses compared to existing 650 V SiC and Si MOSFETs. The AC/DC stage of this AI server power supply unit uses multi-level PFC, with a power density of more than 100 W/in³ and an efficiency of 99.5%, which is 0.3 percentage points higher than the solution using 650 V SiC MOSFETs. In addition, the system solution is improved by using CoolGaN™ transistors in the DC/DC stage. With this high-performance MOSFET and transistor combination, the power supply can provide more than 8 kW of power, with a power density more than 3 times higher than existing solutions.

The new MOSFET portfolio includes 10 products in total: 5 RDS(on) grade (11 to 45 mΩ) products are available in Kelvin Source TOLL and D²PAK-7 packages with .XT package interconnect technology. With a drain-source breakdown voltage of 400 V at Tvj = 25°C, they are ideal for use in 2- and 3-level converters and synchronous rectification. The components are highly robust under harsh switching conditions and are 100% avalanche tested. The combination of highly robust CoolSiC™ technology and .XT interconnect technology enables these semiconductor devices to handle power peaks and transients caused by the sudden changes in power requirements of AI processors, and their connection technology and low positive RDS(on) temperature coefficient enable them to perform well even under operating conditions with high junction temperatures.

Availability

Engineering samples of the CoolSiC™ MOSFET 400 V portfolio are available now, with mass production set to start in October 2024.