NXP and ZF collaborate on SiC-based traction inverter to enhance electric vehicle powertrains

NXP’s high-voltage isolated gate driver family integrated into ZF’s next-generation 800 V SiC electric vehicle traction inverter solution

●The collaboration aims to improve the safety, energy efficiency, range and performance of electric vehicles

The GD316x product family has multiple features to protect high-voltage SiC power switches and leverage their advantages

Eindhoven, the Netherlands - June 14, 2024 - NXP Semiconductors NV (NXP Semiconductors NV) announced a collaboration with ZF Friedrichshafen AG, a leader in the field of electric vehicles, on the next generation of SiC-based electric vehicle (EV) traction inverter solutions. The solution uses NXP's advanced GD316x high-voltage (HV) isolated gate driver to accelerate the adoption of 800V and SiC power devices. The GD316x product family enables the implementation of safe, efficient and higher-performance traction inverters, which can extend the range of electric vehicles, reduce charging times, and reduce system-level costs for OEMs.

The collaboration between NXP and ZF is an important step in driving electrification in the automotive industry, helping to create safer, more sustainable and energy-efficient electric vehicles for the future.

Dr. Carsten Götte, Senior Vice President of Electric Powertrain Technology at ZF , said: “We look forward to working with NXP to enhance the functionality and performance of our 800V traction inverter solutions, which will help us achieve our emissions reduction and sustainability goals. With ZF’s expertise in motor control and power electronics and NXP’s GD316x gate driver family, our latest SiC-based traction inverters can provide higher power and volume density, efficiency and differentiation, thereby bringing significant safety, efficiency, range and performance improvements to our customers.”

The traction inverter is a key component of the electric powertrain of electric vehicles. It converts the DC voltage of the battery into an AC voltage that varies with time to drive the vehicle's motor. Traction inverters are gradually turning to SiC designs, and SiC power devices need to be used in conjunction with advanced high-voltage isolated gate drivers. Compared with the previous generation of silicon-based IGBT and MOSFET power switches, SiC has the advantages of higher switching frequency, lower conduction loss, better thermal characteristics, and stronger high-voltage stability.

The GD316x series of advanced functional safety isolated high-voltage gate drivers integrate a variety of programmable control, diagnostic, monitoring and protection functions to better drive the latest SiC power modules for automotive traction inverter applications. The GD3162 is highly integrated, so it is very small and simplifies the system design process. Its outstanding functions can reduce electromagnetic compatibility (EMC) noise while reducing switching energy losses to improve efficiency. The fast short-circuit protection time (<1 µs) combined with a powerful programmable gate drive scheme can optimize the performance of SiC power modules for traction inverters.

Li Xiaohe, senior vice president and general manager of new energy and drive system product line of NXP Semiconductors, said: "We are working with ZF to develop the next generation of power electronics for future electric vehicles. Our gate driver series implements several outstanding functions to protect high-voltage SiC power switches while leveraging their advantages, making it a perfect fit for ZF's new SiC-based traction inverter solution. This collaboration demonstrates our commitment to providing advanced solutions to help OEMs achieve their electric vehicle performance and sustainability goals."

ZF traction inverters using NXP's GD316x product family are already in use.