Toshiba launches 100V N-channel power MOSFET to help miniaturize power supply circuits

—Using the latest generation process to provide low on-resistance and extended safe operating area—

Shanghai, China, June 29, 2023 - Toshiba Electronic Components and Storage Corporation ("Toshiba") today announced the launch of the 100V N-channel power MOSFET "TPH3R10AQM" manufactured using Toshiba's latest generation U-MOS XH process . The new product is suitable for applications such as switching circuits and hot-swappable circuits [1] on the power lines of industrial equipment used in data centers and communication base stations. This product starts shipping in bulk today.

TPH3R10AQM has an industry-leading [2] maximum drain-source on-resistance of 3.1mΩ, which is 16% lower than Toshiba's current 100V product "TPH3R70APL" [2] . Through the same comparison, TPH3R10AQM expands the safe working area by 76%[3], making it suitable for linear mode operation. Furthermore, lowering the on-resistance and expanding the linear operating range of the safe operating area can reduce the number of parallel connections. In addition, its gate threshold voltage range is from 2.5V to 3.5V, making it less prone to failure due to gate voltage noise.

The new products are available in the highly compatible SOP Advance(N) package.

In the future, Toshiba will continue to expand its power MOSFET product line to improve power efficiency by reducing losses and help reduce equipment power consumption.

Application ​

-Power supply for communication equipment such as data centers and communication base stations

-Switching power supply (high efficiency DC-DC converter, etc.)

Features ​

- Industry-leading [2] low on-resistance: RDS(ON)=3.1mΩ (maximum value) (VGS=10V)

-Wide safe work area

-High rated junction temperature: Tch (maximum value) = 175℃

Main specifications

Note:

[1] A circuit that turns system components on and off without shutting down the system while the equipment is operating.

[2] Toshiba survey as of June 2023.

[3] Pulse width: tw=10ms, VDS=48V