GaN Systems HD Half-Bridge Bipolar Driver Switch Evaluation Board Now Available at Mouser

June 14, 2022 – Mouser Electronics, Inc., the industry leader in New Product Introduction (NPI) distribution of the broadest selection of semiconductors and electronic components™, is now stocking GaN Systems’ GS-EVB-HB-0650603B-HD half-bridge bipolar driver switch evaluation board . This compact gallium nitride (GaN) enhancement-mode (e-mode) half-bridge evaluation board delivers high performance while reducing the total number of components and saving valuable board space.

The GaN Systems GS-EVB-HB-0650603B-HD board, available from Mouser Electronics, features two HEY1011-L12C GaN FET drivers and two 650 V, 60 A GaN enhancement-mode transistors in a half-bridge configuration. The HEY1011 is an isolated gate driver optimized for driving GaN FETs with fast propagation delays and high peak source/sink capabilities for high-frequency applications that require isolation, level shifting, or ground isolation for noise immunity. Because the HEY1011 driver does not require a secondary-side power supply or bootstrap components, valuable board space is freed up, making the design more cost-effective.

To help mitigate the effects of gate-to-drain capacitance current, the GS-EVB-HB-0650603B-HD incorporates a bipolar gate drive. The board can perform double pulse testing or connect the half bridge to an existing LC power segment. Double pulse testing can be used to safely evaluate the characteristics of a power switch under hard switching conditions.

GaN Systems GS-EVB-HB-0650603B-HD Half-Bridge Bipolar Drive Switch Evaluation Board is ideal for developing high power wireless chargers, industrial inverters, motor drives/VFDs, data centers, residential energy storage systems, and other power electronics applications.

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