ON Semiconductor Launches World's First 650 V Silicon Carbide MOSFET in TOLL Package

New devices reduce package size by 60 percent, enhance performance and reduce losses

May 11, 2022 - ON Semiconductor, a leader in smart power and smart sensing technologies , announced the world's first To-Leadless (TOLL) packaged silicon carbide (SiC) MOSFET at PCIM Europe. The transistor meets the rapidly growing demand for high-performance switching devices suitable for high-power density designs. Until recently, SiC devices have been packaged in D2PAK 7-pin packages, which require significantly more space.

The TOLL package measures only 9.90 mm x 11.68 mm, saving 30% of the PCB area compared to the D2PAK package . In addition, its profile is only 2.30 mm, which is 60% smaller than the D2PAK package.

In addition to its smaller size, the TOLL package offers better thermal performance and lower package inductance (2 nH) than the D2PAK 7-pin. Its Kelvin source configuration ensures lower gate noise and switching losses – including a 60% reduction in conduction losses (EON) compared to devices without a Kelvin configuration, ensuring significant improvements in efficiency and power density in challenging power supply designs, as well as improved electromagnetic interference (EMI) and easier PCB design.

“The ability to provide highly reliable power designs in a small space is becoming a competitive advantage in many areas, including industrial, high-performance power and server applications,” said Asif Jakwani, senior vice president and general manager of ON Semiconductor’s Advanced Power Division. “Packaging our best-in-class SiC MOSFETs in a TOLL package not only reduces space, but also enhances performance in many areas, such as EMI and reduced losses, providing the market with highly reliable and rugged high-performance switching devices that will help power designers solve their stringent power design challenges.”

SiC devices have significant advantages over their silicon predecessors, including enhanced high-frequency energy efficiency, lower EMI, higher temperature operation and greater reliability. ON Semiconductor is the only SiC solution provider with vertical integration capabilities, including SiC crystal ball growth, substrates, epitaxy, wafer manufacturing, best-in-class integrated modules and discrete packaging solutions.

The NTBL045N065SC1 is the first SiC MOSFET in a TOLL package for demanding applications including switch mode power supplies (SMPS), server and telecom power supplies, solar inverters, uninterruptible power supplies (UPS) and energy storage. The device is suitable for designs that need to meet the most challenging energy efficiency standards, including ErP and 80 PLUS Titanium energy efficiency standards.

The NTBL045N065SC1 has a VDSS rating of 650 V, a typical RDS(on) of only 33 mΩ, and a maximum current consumption (ID) of 73 A. Based on wide bandgap (WBG) SiC technology, the device has a maximum operating temperature of 175°C and has an ultra-low gate charge (QG(tot) = 105 nC), which can significantly reduce switching losses. In addition, the TOLL package is guaranteed to moisture sensitivity level 1 (MSL1) to ensure reduced failure rates in mass production.

In addition, ON Semiconductor also provides automotive-grade devices, including TO-247 3-pin, 4-pin and D2PAK 7-pin packages.