High-K Materials
High K Material Introduction
High dielectric constant materials are also called high -K materials, where k is the dielectric constant , which measures the material's ability to store charge. According to the dielectric constant , they are divided into low -K materials and high-K materials . In the semiconductor manufacturing process, the dielectric constant of low-k materials is generally lower than 3.0 ; while high-K materials are defined relative to the gate dielectric material SiO2 . As long as the dielectric constant is greater than the dielectric constant of SiO2, which is 3.9 , they are generally called high-K materials.
Mos tube
Application of High-K Materials
As the size of advanced processes decreases, more transistors can be placed in the same area to improve integration, and the proportional reduction of device size is also reflected in the shorter gate length in the horizontal direction and the shallower source and drain in the vertical direction , thinner gate and gate oxide .
As the thickness of gate oxide continues to decrease, in order to suppress the short channel effect , the EOT (equivalent oxide thickness of gate dielectric) must be reduced . EOT is the thickness of pure SiO2 gate dielectric when high-k dielectric and pure SiO2 gate dielectric achieve the same gate capacitance .
Replacing SiO2 with high-K material and increasing its physical thickness while keeping EOT the same will reduce its gate current density .
Dielectric layer
HKMG Technology
The semiconductor industry currently uses
high-k
dielectric constant material
HfO2
to improve
the gate leakage current
problem.
The dielectric constant of
HfO2
is
25.
Under the
same
EOT
conditions,
the physical thickness
of
HfO2
is
several times that of
SiO2
. However,
the compatibility
between
high-k dielectric
and polysilicon gate
is not very good.
The use of
metal gate
can
solve the compatibility problem
. This is
the HKMG (high-k metal gate) process
we often hear about
.
Comparison between ordinary transistor process and Samsung HKMG process
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