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Datasheet> All Categories > Discrete semiconductor> diode> RBR2MM30BTFTR
RBR2MM30BTFTR PDF
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RBR2MM30BTFTR

Description
Diode Schottky 30 V 2A Surface Mount PMDU
CategoryDiscrete semiconductor    diode   
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Download Datasheet Parametric View All

RBR2MM30BTFTR Overview

RBR2MM30BTFTR is a small molded type Schottky barrier diode manufactured with silicon epitaxial planar structure. It has high reliability and low VF (forward voltage) characteristics and is mainly used for general rectification applications.

RBR2MM30BTFTR Parametric

Parameter NameAttribute value
categoryDiscrete semiconductor;diode
MakerROHM Semiconductor
seriesAutomotive, AEC-Q101
PackageTape and Reel (TR) Cut Tape (CT)
technologySchottky
Voltage - DC reverse (Vr) (maximum)30 V
Current - average rectification (Io)2A
Voltage at different If - Forward (Vf)490 mV @ 2 A
speedFast recovery = < 500ns, > 200mA (Io)
Current at different Vr - reverse leakage80 µA @ 30 V
Capacitance at different Vr, F-
Installation typesurface mount type
Package/casingSOD-123F
Supplier device packagingPMDU
Operating Temperature - Junction150°C (maximum)
Basic product numberRBR2MM30

RBR2MM30BTFTR Preview

Download Datasheet
RBR2MM30BTF
Schottky Barrier Diode
(AEC-Q101 qualified)
Data sheet
　 　 　
　
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　
●
Outline
V
R
I
o
I
FSM
30
2
30
V
A
A
　
　
　
　
　
　
　
　　　
●
Inner Circuit
●
Features
High reliability
Small power mold type
Low V
F
●
Application
General rectification
●
Structure
Silicon epitaxial planar
●
Packaging Specifications
Packing
Embossed T
ape
Reel Size(mm)
180
T
aping Width(mm)
8
Quantity(pcs)
3000
T
aping Code
TR
Marking
C5
●
Absolute Maximum Ratings (T
c
=25ºC unless otherwise specified)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average rectified forward current
Peak forward surge current
Junction temperature
(1)
Storage temperature
Symbol
V
RM
V
R
I
o
I
FSM
T
j
T
stg
Conditions
Duty
≦
0.5
Reverse direct voltage
Glass epoxy mounted
、
60Hz half sin waveform
、
resistive load
、
T
c
=100
℃
Max.
60Hz half sin waveform
、
Non-repetitive
、
one cycle
、
T
a
=25
℃
Limits
30
30
2
30
150
-55
½
150
Unit
V
V
A
A
℃
℃
-
-
Note(1) T avoid occurrence of thermal runaway
，
actual board is to be designed to fulfill dP
d
/dT
j
<1/R
th(j-a)
.
o
●
Characteristics (T
j
=25ºC unless otherwise specified)
Parameter
Forward voltage
Reverse current
Attention
Symbol
V
F
I
R
Conditions
I
F
=2A
V
R
=30V
Min. Typ. Max. Unit
-
-
-
-
0.49
80
V
μA
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　
www.rohm.com
1/5
© 2016- ROHM Co., Ltd. All rights reserved.
　
2019/05/28_Rev.002

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