Toshiba's low-power IGBT continues to boost the home appliance market

First of all, GT30N135SRA has a small and simple T0-247 package structure. It is the 6.5th generation product based on the updated iteration of the RC-IGBT power semiconductor series. This product has a built-in freewheeling diode chip (FWD) to further ensure the stability of the IGBT to the entire circuit system. When TC = 100 ℃ , Ta = 25 ℃, its collector current rating is 30A, and the corresponding low collector-emitter saturation voltage VCE is 1.65V , and the low diode forward voltage VF is 1.75V . By reducing the conduction loss to reduce the power consumption of the device, it can play a legendary role in the system circuit with limited power supply.

The fast response time of IGBT is an important indicator to measure whether it has real-time characteristics. In order to better illustrate that GT30N135SRA has high-speed switching characteristics, the switching time and switching loss of GT30N135SRA in resistive circuit, capacitive circuit and inductive circuit are designed for further analysis and explanation.

The test results show that when the input V CE = 25V, V GE = 0V, the circuit is in the cut-off state, and I C = 0 A. When V CE = 25V, V GE = 15V, the circuit is in the on state, and the efficiency of I C from 0A to saturation is 90%, and its switching frequency reaches f = 100kHZ.

In the capacitive-inductive circuit, it can be seen that due to the characteristics of the capacitor and inductor that need to be charged and discharged, the voltage and current do not show linear characteristics in the entire mutation process, and the loss calculation formula is E off = . That is, total power consumption = conduction loss (related to the saturation voltage V CEsat ) + switching loss (E off E on ). In the same generation of technology, the conduction loss and switching loss are contradictory and mutually exclusive.

With the rise of IGBT, a new wave has been set off in the entire power semiconductor industry. Because its predecessor is the product of the integration of MOS and BJT technology, most of them are used in industrial products. However, with the rise of energy-saving and emission-reduction guidelines, most home appliances have also ushered in innovations, and novel low-power power semiconductor devices will also bring new prospects to the entire home appliance market. Therefore, GT30N135SRA can show amazing effects in soft switching applications, induction cookers, microwave ovens (home appliances), and voltage resonance frequency conversion switching applications.