Littelfuse Ultra-Low Forward Voltage Drop Schottky Barrier Rectifiers Outperform Traditional Switching Diodes

Latest update time：2021-09-04 06:32

Reads：

Beijing, China, May 18, 2016 - Littelfuse, a leading global supplier of circuit protection solutions, recently announced the launch of the latest product in its expanding power semiconductor product line - the LFUSCD series of silicon carbide (SiC) Schottky diodes.

Compared to standard silicon bipolar power diodes, the LFUSCD series of silicon carbide Schottky diodes allow designers to reduce switching losses, withstand high surge currents without thermal runaway, and operate at higher junction temperatures, all of which improve system efficiency and ruggedness.

The LFUSCD series' merged pn Schottky (MPS) device structure ensures improved surge capability and reduced leakage current. With rated voltages of 650V and 1200V and rated currents from 4A to 30A, it is suitable for a wide range of markets including industrial power supplies, solar inverters, industrial drives, welding and plasma cutting, and EV/HEV charging stations.

The LFUSCD series of SiC Schottky diodes improves efficiency, reliability and thermal management in applications such as:

• Power Factor Correction (PFC).
• Buck or boost stage of a DC-DC converter.
• Freewheeling diodes in inverter stages (Switch Mode Power Supplies, Solar, UPS, Industrial Drives.)
• High frequency output rectification.

“We are pleased to introduce our SiC Schottky diode family as part of our growing power semiconductor portfolio,” said Dr. Kevin Speer, business development manager for the Power Semiconductor Technology Line. “With best-in-class forward voltage drop and storage capacitance charge, Littelfuse SiC diodes enable customers to optimize the efficiency of their designs while improving system ruggedness and reliability.”

The LFUS series of SiC Schottky diodes offer the following key advantages:

• Best-in-class capacitive stored charge and near-zero reverse recovery current make these devices ideal for high-frequency power switching applications, ensuring negligible switching losses and reducing stress on the opposite switch.
• Best-in-class forward voltage drop ensures low conduction losses.
• Maximum junction temperature of 175°C provides greater design margin and more relaxed thermal management requirements.
• Merged pn Schottky (MPS) device structure enhances surge resistance and provides very low leakage current.

for

goods

Affection

condition

The LFUS series of silicon carbide Schottky diodes are available in TO-220 two-lead and TO-247 three-lead tube packages. Samples are available from authorized Littelfuse distributors worldwide. For a list of Littelfuse authorized distributors, visit Littelfuse.com.

More information

For more information, please see the LFUS Series SiC Schottky Diodes product page. For technical questions, please contact: Dr. Kevin Speer, Business Development Manager, Power Semiconductor Product Line, at kspeer@littelfuse.com.

About Littelfuse

Founded in 1927, Littelfuse is the world's leading circuit protection device company with a growing global platform in power control and sensing devices. The company serves global customers in the electronics, automotive and industrial markets with its technologies in fuses, semiconductors, polymers, ceramics, relays and sensors. Littelfuse has more than 9,000 employees in more than 35 locations in the Americas, Europe and Asia. For more information, please visit the Littelfuse website: Littelfuse.com.