SF11G datasheet, PDF - EEWORLD Datasheet

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SF11G: DescriptionSuper Fast Recovery Rectifier, VRRM MAX (V): 50V; IAV MAX (A): 1A; VFM MAX (V): 0.95V; @ IF (A): 1A; IFSM MAX (A): 30A; IR MAX (UA): 5uA; @VR (V): 50V; TRR MAX (NS): 35ns; Package: DO-41; CategoryDiscrete semiconductor diode; File Size348KB，2 Pages; ManufacturerGalaxy Microelectronics

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SF11G Overview

Super Fast Recovery Rectifier, VRRM MAX (V): 50V; IAV MAX (A): 1A; VFM MAX (V): 0.95V; @ IF (A): 1A; IFSM MAX (A): 30A; IR MAX (UA): 5uA; @VR (V): 50V; TRR MAX (NS): 35ns; Package: DO-41

SF11G Parametric

Parameter Name	Attribute value
Maker	Galaxy Microelectronics
Parts packaging code	DO-41
Reach Compliance Code	unknown
Diode type	RECTIFIER DIODE

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FEATURES

GALAXY ELECTRICAL

SF11G

---

SF18G

VOLTAGE RANGE: 50 ---

600

CURRENT:

1.0

GLASS PASSIVATED RECTIFIERS

The plastic package carries underwrites laboratory

flammability classification 94V-O

High current capability

Low reverse leakage

Glass passivated junction

Low forward voltage drop

vvvvv

DO -

MECHANICAL DATA

Case:JEDEC DO-41,molded plastic

Terminals: Axial lead ,solderable per

MIL- STD-202,Method 208

Polarity: Color band denotes cathode

Weight: 0.012 ounces,0.34 grams

Mounting position: Any

Dimensions in millimeters

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

ambient temperature unless otherwise specified.

Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.

11G

Maximum recurrent peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forw ard rectified current

9.5mm lead length,

=75

12G

100

13G

150

105

150

14G

200

140

200

1.0

15G

300

210

300

16G

400

280

400

17G

500

350

500

18G

600

420

600

UNITS

RRM

RMS

F(AV)

Peak forw ard surge current

8.3ms single half-sine-w ave

superimposed on rated load

Maximum instantaneous forw ard voltage

@ 1.0 A

Maximum reverse recovery time

(Note1)

FSM

30.0

STG

0.95

1.3

1.7

5.0

100.0

50.0

- 50 ---- + 150

- 50---- + 150

25.0

Maximum reverse current

at rated DC blocking voltage

Typical junction capacitance

=25

=100

(Note2)

Operating junction temperature range

Storage temperature range

NOTE:

1. Measured with I

=0.5A,I

=1.0A,Irr=0.25A.

2.Measured at 1.0MHz and applied reverse v oltage of 4.0V DC.

www.galaxycn.com

Document Number

1769019

GALAXY ELECTRICAL

SF11G Related Products

	SF11G	SF12G	SF18G	SF13G	SF15G	SF14G	SF16G	SF17G
Description	Super Fast Recovery Rectifier, VRRM MAX (V): 50V; IAV MAX (A): 1A; VFM MAX (V): 0.95V; @ IF (A): 1A; IFSM MAX (A): 30A; IR MAX (UA): 5uA; @VR (V): 50V; TRR MAX (NS): 35ns; Package: DO-41	Super Fast Recovery Rectifier, VRRM MAX (V): 100V; IAV MAX (A): 1A; VFM MAX (V): 0.95V; @ IF (A): 1A; IFSM MAX (A): 30A; IR MAX (UA): 5uA; @VR (V): 100V; TRR MAX (NS): 35ns; Package: DO-41	Super Fast Recovery Rectifier, VRRM MAX (V): 600V; IAV MAX (A): 1A; VFM MAX (V): 1.7V; @ IF (A): 1A; IFSM MAX (A): 30A; IR MAX (UA): 10uA; @VR (V): 600V; TRR MAX (NS): 35ns; Package: DO-41	1A,150V,Super Fast Rectifiers, Diodes, Single, 150V, 1A, 0.95V, 1A, 30A	1A,300V,Super Fast Rectifiers, Diodes, Single, 300V, 1A, 1.3V, 1A, 30A	1A,200V,Super Fast Rectifiers, Diodes, Single, 200V, 1A, 0.95V, 1A, 30A	Super Fast Recovery Rectifier, VRRM MAX (V): 400V; IAV MAX (A): 1A; VFM MAX (V): 1.3V; @ IF (A): 1A; IFSM MAX (A): 30A; IR MAX (UA): 5uA; @VR (V): 400V; TRR MAX (NS): 35ns; Package: DO-41	1A,500V,Super Fast Rectifiers, Diodes, Single, 500V, 1A, 1.7V, 1A, 30A
Parts packaging code	DO-41	DO-41	DO-41	DO-41	DO-41	DO-41	DO-41	DO-41
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maker	Galaxy Microelectronics	-	-	Galaxy Microelectronics	Galaxy Microelectronics	Galaxy Microelectronics	Galaxy Microelectronics	Galaxy Microelectronics

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